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Número de pieza | 16N60 | |
Descripción | FCP16N60 | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 16N60 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. Rds(on) = 0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
• RoHS Compliant
December 2008
SuperFETTM
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FCP16N60 FCPF16N60
600
16 16*
10.1 10.1*
48 48*
± 30
450
16
20.8
4.5
167 37.9
1.33 0.3
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75
62.5
FCPF16N60
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. B1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page Figure 11-1. Transient Thermal Response Curve (FCP16N60)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
1 0 -2
single pulse
*N otes :
1. Z (t) = 0.75 oC /W M ax.
θJC
2. D uty Factor, D =t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S quare W ave P ulse D uration [sec]
1
Figure 11-2. Transient Thermal Response Curve (FCPF16N60)
101
D =0.5
100
0.2
0.1
0.05
10 -1 0 .0 2
0.01
single pulse
1 0 -2
*N otes :
1. Z (t) = 3.3 oC /W M ax.
θJC
2. D uty Factor, D =t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S quare W ave P ulse D uration [sec]
1
FCP16N60 / FCPF16N60 Rev. B1
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 16N60.PDF ] |
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