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PDF 16N60 Data sheet ( Hoja de datos )

Número de pieza 16N60
Descripción N-Channel Power MOSFET / Transistor
Fabricantes nELL 
Logotipo nELL Logotipo



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No Preview Available ! 16N60 Hoja de datos, Descripción, Manual

SEMICONDUCTOR
16N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(16A, 600Volts)
DESCRIPTION
The Nell 16N60 is a three-terminal silicon
device with current conduction capability of 16A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, server/telecom
power, FPD TV power, ATX power, and industrial
power applications.
FEATURES
RDS(ON) = 0.17Ω @ VGS = 10V
Ultra low gate charge(52.3nC max.)
Low reverse transfer capacitance
(CRSS = 5pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(16N60A)
GDS
TO-220F
(16N60AF)
D
G
D
S
TO-3PB
(16N60B)
PRODUCT SUMMARY
ID (A)
16
VDSS (V)
600
RDS(ON) (Ω)
0.17 @ VGS = 10V
QG(nC) max.
52.3
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10

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16N60 pdf
SEMICONDUCTOR
RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM
16N60 Series RRooHHSS
Nell High Power Products
10V
VDS
VGS
RG
RL
VDD
D.U.T.
VDS
90%
VGS 10%
td(ON)
tr td(OFF)
ton
tf
toff
UNCLAMPED INDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
10V
RG
tp
VDS
lD
L
D.U.T.
VDD
BVDSS
lAS
VDD
EAS =
1
2
L· lAS2
lD(t)
tP
VDS(t)
Time
PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS
D.U.T.
ISD
Driver
RG
VGS
+
VDS
-
L
Same Type
as DUT
* dv/dt controlled by RG
* lSD controlled by pulse period
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
D=
Gate Pulse Width
Gate Pulse Period
10V
lFM, Body Diode Forward Current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
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