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88N30W-HF-3 の電気的特性と機能

88N30W-HF-3のメーカーはAdvanced Power Electronicsです、この部品の機能は「AP88N30W-HF-3」です。


製品の詳細 ( Datasheet PDF )

部品番号 88N30W-HF-3
部品説明 AP88N30W-HF-3
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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88N30W-HF-3 Datasheet, 88N30W-HF-3 PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP88N30W-HF-3
N-channel Enhancement-mode Power MOSFET
Low On-Resistance
Simple Drive Requirement
Fast Switching Characteristics
G
D
S
BV DSS
R DS(ON)
ID
300V
48m
48A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP88N30W-HF-3 is in the TO-3P through-hole package which is
widely used in higher power commercial and industrial applications
where an attached heatsink is required.
This device is well suited for use in applications such as motor drives,
inverteers and DC/DC converters.
G
DS
D (tab)
TO-3P (W)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
IDM
IDR
IDR(PULSE)
PD at TC=25°C
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current1
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Rating
300
±30
48
160
48
160
312
2.5
30
45
-55 to 150
-55 to 150
Units
V
A
A
A
A
W
W/°C
A
mJ
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.4
40
Units
°C/W
°C/W
Ordering Information
AP88N30W-HF-3TB : in RoHS-compliant, halogen-free TO-3P, shipped in tubes (1440 pcs/carton)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201009158-3
1/5
Free Datasheet http://www.Datasheet4U.com

1 Page





88N30W-HF-3 pdf, ピン配列
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
160
T C =25 o C
120
10V
8.0V
7.0V
6.0V
80
40
V G =5.0V
0
0.0 4.0 8.0 12.0
V DS , Drain-to-Source Voltage (V)
16.0
Fig 1. Typical Output Characteristics
50
T C =25 o C
48
46
44
I D =44A
I D =22A
42
40
4 5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
50
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP88N30W-HF-3
100
T C =150 o C
80
60
40
10V
8.0V
7.0V
6.0V
V G =5.0V
20
0
0.0 4.0 8.0 12.0 16.0 20.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =44A
V G =10V
2.3
1.8
1.3
0.8
0.3
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/5
Free Datasheet http://www.Datasheet4U.com


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共有リンク

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部品番号部品説明メーカ
88N30W-HF-3

AP88N30W-HF-3

Advanced Power Electronics
Advanced Power Electronics


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