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PDF ME15N10-G Data sheet ( Hoja de datos )
| Número de pieza | ME15N10-G | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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N-Channel 100-V (D-S) MOSFET
ME15N10/ME15N10-G
GENERAL DESCRIPTION
The ME15N10 is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
FEATURES
● RDS(ON)≦100mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
e Ordering Information: ME15N10 (Pb-free)
ME15N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25℃
Current(Tj=150℃)
TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃
TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case *
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJC
Rating
100
±20
14.7
13.6
59
34.7
22.2
-55 to 150
3.6
* The device mounted on 1in2 FR4 board with 2 oz copper
Dec,2009-Ver1.0
Unit
V
V
A
A
W
℃
℃/W
01Free Datasheet http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ME15N10-G.PDF ] | |
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