PDF IXTP80N10T Data sheet ( Hoja de datos )

Número de pieza	IXTP80N10T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS
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No Preview Available ! TrenchMVTM Power MOSFET IXTA80N10T IXTP80N10T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 100 100 V V ± 20 V ± 30 V 80 A 220 A 25 A 400 mJ 230 W 10 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 100μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = 105V, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Note 1 & 2 Characteristic Values Min. Typ. Max. 105 V 2.5 5.0 V ± 200 nA 5 μA 150 μA 14 mΩ VDSS ID25 = = ≤RDS(on) 100V 80A 14mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z International Standard Packages z 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V Systems z High Current Switching Applications z Distributed Power Architechtures and VRMs z Electronic Valve Train Systems © 2009 IXYS CORPORATION, All Rights Reserved DS99648A(11/09) Free Datasheet http://www.Datasheet4U.com 1 page Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 65 RG = 15Ω , VGS = 10V VDS = 50V 60 55 I D = 30A 50 45 40 35 25 I D = 10A 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 280 240 t r td(on) - - - - TJ = 125ºC, VGS = 10V 200 VDS = 50V I D = 30A 160 95 85 75 65 120 55 80 I D = 10A 45 40 35 0 25 15 20 25 30 35 40 45 50 55 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 50 78 t f td(off) - - - - 48 RG = 15Ω, VGS = 10V 70 VDS = 50V 46 62 44 TJ = 125ºC 54 42 46 40 TJ = 25ºC 38 38 30 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes IXTA80N10T IXTP80N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 80 75 RG = 15Ω , VGS = 10V VDS = 50V 70 TJ = 25ºC 65 60 55 50 45 TJ = 125ºC 40 35 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 49 48 47 t f td(off) - - - - 46 RG = 15Ω, VGS = 10V 45 VDS = 50V I D = 10A 44 43 I D = 30A 42 41 40 39 25 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade 76 72 68 64 60 56 52 48 44 40 36 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 160 t f td(off) - - - - 140 TJ = 125ºC, VGS = 10V VDS = 50V 120 100 I D = 10A 270 230 190 150 80 110 60 I D = 30A 70 40 30 15 20 25 30 35 40 45 50 55 RG - Ohms © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_80N10T(3V)12-11-07-A Free Datasheet http://www.Datasheet4U.com 5 Page

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