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IXTA80N10T の電気的特性と機能

IXTA80N10TのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA80N10T
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTA80N10T Datasheet, IXTA80N10T PDF,ピン配置, 機能
TrenchMVTM
Power MOSFET
IXTA80N10T
IXTP80N10T
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dV/dt
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
100
100
V
V
± 20 V
± 30 V
80 A
220 A
25 A
400 mJ
230 W
10 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 100μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = 105V, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Note 1 & 2
Characteristic Values
Min. Typ. Max.
105 V
2.5 5.0 V
± 200 nA
5 μA
150 μA
14 mΩ
VDSS
ID25
=
=
RDS(on)
100V
80A
14mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z Avalanche Rated
z High Current Handling Capability
z Fast Intrinsic Diode
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Automotive
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
- ABS Systems
z DC/DC Converters and Off-Line UPS
z Primary Switch for 24V and 48V
Systems
z High Current Switching Applications
z Distributed Power Architechtures
and VRMs
z Electronic Valve Train Systems
© 2009 IXYS CORPORATION, All Rights Reserved
DS99648A(11/09)
Free Datasheet http://www.Datasheet4U.com

1 Page





IXTA80N10T pdf, ピン配列
IXTA80N10T
IXTP80N10T
Fig. 1. Output Characteristics @ TJ = 25ºC
80
VGS = 10V
70 9V
8V
60
50
40 7V
30
20
6V
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
80
VGS = 10V
70 9V
8V
60
50
7V
40
30
6V
20
10 5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS - Volts
4.6
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
Fig. 5. RDS(on) Normalized to ID = 40A Value
vs. Drain Current
VGS = 10V
15V - - - -
TJ = 175ºC
TJ = 25ºC
25 50 75 100 125 150 175 200 225 250
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
280
VGS = 10V
240
200 9V
160
8V
120
80
7V
40
0 6V
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.
Junction Temperature
2.8
VGS = 10V
2.4
2.0 I D = 80A
1.6
I D = 40A
1.2
0.8
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
90
80
70
60
50
40
30
20
10
0
-50
Fig. 6. Drain Current vs. Case Temperature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade
175
© 2009 IXYS CORPORATION, All Rights Reserved
Free Datasheet http://www.Datasheet4U.com


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IXTA80N10T

Power MOSFET ( Transistor )

IXYS
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