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7MBP75JB060 の電気的特性と機能

7MBP75JB060のメーカーはFujiです、この部品の機能は「New Intelligent Power Modules」です。


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部品番号 7MBP75JB060
部品説明 New Intelligent Power Modules
メーカ Fuji
ロゴ Fuji ロゴ 




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7MBP75JB060 Datasheet, 7MBP75JB060 PDF,ピン配置, 機能
New Intelligent Power Modules (R Series)
Atsushi Yamaguchi
Hiroaki Ichikawa
1. Introduction
The equipment of power electronics application is
comprised of general use inverters, numeric control
(NC) machine tools, and industrial robots. Recently,
the requirements of lower noise, higher efficiency,
advanced functions, lower price, and downsizing for
these items have been growing.
The power devices used as the equipment of power
electronics applications are progressing toward lower
loss and higher frequency, and the IGBT (insulated
gate bipolar transistor) rather than the bipolar transis-
tor is gaining popularity.
On the other hand, together with lowered loss for
the IGBT, intelligence is achieved by locating the
peripheral circuits such as the driving circuit and
various protective circuits inside the module. It then
becomes possible to shorten the design time at the
power circuit and contributes to downsizing and ad-
vanced equipment function.
In keeping step with the trends of making the
power devices intelligent, Fuji Electric announced the
bipolar transistor type of intelligent power modules
(BJT-IPM) in 1989. In 1992, the J series of IGBT-IPM
(J-IPM) that pursued lower loss was developed and in
1995 the N series of IGBT-IPM (N-IPM) aimed at
lower price and lower noise was developed and pro-
duced. This time, the R series of IGBT-IPM (R-IPM)
pursues higher cost performance, higher reliability and
advanced functions.
The line-up and features of Fuji Electric’s IGBT-
IPMs and the R-IPM are introduced in the following.
2. Fuji Electric’s Conventional IGBT-IPM Line-Up
and Problems
The line-up, performances and features of both the
J-IPM and N-IPM are shown in Table 1. The J-IPM
was developed with particular attention to low loss.
The N-IPM realized low noise (soft switching) and low
loss in order to respond to the market needs of EMC
(electro magnetic compatibility) regulations and to
match the CE mark. Furthermore, the N-IPM is an
IPM with a lower price and higher reliability made
possible by the adoption of new construction and new
materials. The integrated functions are shown in
Table 1 The J-IPM and the N-IPM
Series
J-IPM
N-IPM
Type
6MBP15JB060
6MBP20JB060
6MBP100JA060
6MPB150JA060
6MBP200JA060
6MBP100JA120
7MBP50JB060
7MBP75JB060
7MBP50JA120
6MBP50NA060
6MPB75NA060
6MPB100NA060
7MBP50NA060
7MBP75NA060
7MBP100NA060
VCES (V)
600
600
600
600
600
1,200
600
600
1,200
600
600
600
600
600
600
Inverter
IC (A)
15
20
100
150
200
100
50
75
50
50
75
100
50
75
100
PC (W)
40
50
240
450
600
600
150
195
240
198
320
400
198
320
400
Dynamic brake
VCES (V)
IC (A)
––
––
––
––
––
––
600 30
600 30
1,200
15
––
––
––
600 30
600 50
600 50
PC (W)
80
80
80
120
198
198
Features
Low loss
High speed switching
Low loss
Soft switching
High reliability
New Intelligent Power Modules (R Series)
27
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7MBP75JB060 pdf, ピン配列
Table 3 Line-up and integrated functions of the R-IPM
(a) 600V series
Type
VDC VCES
(V) (V)
6MBP50RA060 450 600
6MBP75RA060 450 600
6MBP100RA060 450 600
6MPB150RA060 450 600
7MBP50RA060 450 600
7MBP75RA060 450 600
7MBP100RA060 450 600
7MBP150RA060 450 600
6MBP200RA060 *
6MBP300RA060 *
7MBP300RA060 *
7MBP200RA060 *
450
450
450
450
600
600
600
600
Inverter
IC PC
(A) (W)
50 198
75 320
100 400
150 600
50 198
75 320
100 400
150 600
200 735
300 1,040
300 1,040
200 735
Dynamic brake
VCE(sat) VCES IC PC Diode
Typical (V) (V) (A) (W) IF (A)
2.3 – – – –
2.3 – – – –
2.3 – – – –
2.3 – – – –
2.3 600 30 120 30
2.3 600 50 198 50
2.3 600 50 198 50
2.3 600 50 198 50
2.3 – – – –
2.3 – – – –
2.3 600 100 400 100
2.3 600 75 320 75
Integrated functions
Package
Dr UVT OCT SCT Tc-OHT Tj-OHT
P610
P610
P611
P611
P610
P610
P611
P611
P612
P612
P612
P612
(b) 1,200V series
Inverter
Dynamic brake
Integrated functions
Type
VDC VCES IC
(V) (V) (A)
PC
(W)
VCE(sat) VCES IC
Typical (V) (V) (A)
PC
(W)
Diode
IF (A)
Package
Dr UVT OCT SCT Tc-OHT Tj-OHT
6MBP25RA120 * 900 1,200 25 198 2.3 – – – –
P610
6MBP50RA120 * 900 1,200 50 400 2.3 – – – –
P611
6MBP75RA120 * 900 1,200 75 595 2.3 – – – –
P611
7MPB25RA120 * 900 1,200 25 198
2.3 1,200 15 120 15
P610
7MBP50RA120 * 900 1,200 50 400
2.3 1,200 25 198 25
P611
7MBP75RA120 * 900 1,200 75 595
2.3 1,200 25 198 25
P611
6MBP100RA120 * 900 1,200 100 735 2.3 – – – –
P612
6MBP150RA120 * 900 1,200 150 1,040
2.3
–––
P612
7MBP100RA120 * 900 1,200 100 735
2.3 1,200 50 400 50
P612
7MBP150RA120 * 900 1,200 150 1,040
2.3 1,200 50 400 50
P612
*: Under development
Dr: Drive circuit. UVT: Control power supply under voltage protection, OCT: Overcurrent protection, SCT: Short circuit protection
T C -OHT: Case overheat protection, Tj -OHT: Device overheat protection
Fig.3 External view of the R-IPM
as well as 6-pack and 7-pack (including a dynamic
brake circuit), this series is able to respond to the
various market needs.
4. Features of the R-IPM
The features of the R-IPM can be summarized as
follows:
(1) Low loss and soft switching by using the third
generation IGBT chips
(2) Realization of high reliability, pursing higher
performance of the IGBT by means of the protec-
tion by directly detecting the IGBT chips tempara-
ture
(3) Realization of high reliability and high cost perfor-
mance by means of integrating all control circuits
into the IC chips
(4) A wide line-up together with the adoption of a
compatible package (P610, P611) with Fuji’s con-
ventional IPM
(5) Accomplishment of good noise immunity against
malfunction due to switching noise
The key technical points concerning the develop-
New Intelligent Power Modules (R Series)
29
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7MBP75JB060 電子部品, 半導体
the input signal is off state and the temperature
reaches reset level.
4.2 Integration of the control circuit to the IC
The control circuit of IPMs were designed and
evaluated, combining with IGBT chips after ICs were
designed. Therefore, it had to adjust a drive ability of
an IGBT and various protection functions and accom-
plish good noise immunity by using additional parts
other than ICs. It is impossible to achieve a single chip
IC which is not adjustable and has adopted a hybrid
construction combined with various electronics parts.
Consequently, the further downsizing or lowering of
costs is deviously limited. However, the R-IPM solves
these problems through experiments cultivated by the
development of the conventional IPM and the technolo-
gies to be described below.
Integration of the IPM control circuit with the IC
involves an adjusting method with the IGBT and
measures against noise. With the following techno-
loties, the integration of the control circuit to the IC is
successful.
(1) Through simulation technology conducted by a
combination of IGBT characteristics and IC char-
acteristics, the most suitable design is determined
by theoretical study and review of such factors as
the necessary capabilities required for the IC.
(2) The noise immunity is improved by insertion of a
filter on the reference power supply of each circuit
block, and by incorporating a filter into the IC,
formerly provided externally, which results in less
noise on the circuit pattern.
(3) Malfunction are prevented by reducing noise in-
flow. This is achieved by separating the noise
sensitive IGBT ground from the sensing and
protection circuit grounds.
(4) The noise immunity increased remarkably by the
reduction of wiring volume of the control circuit
compared with the conventional IPM through the
integration of the control circuit within the IC.
(5) Low loss and soft switching are realized through
the prevention of influence from outside noise by
locating the IGBT and the IC as close as possible
and through the optimization of the IC so that it
can efficiently drive the IGBT.
The switching waveforms of the J-IPM and the R-
IPM are shown in Fig 8. In particular, the R-IPM
restricts di / dt, dv/ dt at the time of turn-on and
recovery, and realizes soft switching.
Through the measures mentioned above, the num-
ber of electronics parts have been reduced to 1/10 that
of the J-IPM, as shown in Fig. 9.
4.3 Package construction
Facilitated use is taken into consideration for the
newly designed package, maintaining compatibility.
The features are as follows.
(1) Preservation of compatibility of the mounting,
main terminal and control terminal position
(P610, P611 package)
(2) Preservation of endurance against bending frac-
ture through the adoption of metallic guide pins
for the control terminals
(3) Dissolution of a terminal deformation through the
shortening of control terminals
(4) Realization of a thin shape and light weight
through optimization of the internal construction
5. Conclusion
Fuji Electric’s IPMs and the series and features of
the recently developed the R-IPM have been intro-
duced. The R-IPM is the first product to comprise the
IPM utilizing only silicon semiconductors. In addition,
the function which directly detects the temperature of
the IGBT chips has been newly built-in. We firmly
believe that application of the R-IPM contributes to the
downsizing and high reliability of the equipment by a
considerable degree.
Furthermore, making the power devices intelligent
will be promoted more often in the future, together
with the progress of IC technology, corresponding to
the needs for reduced total system costs, downsizing
and high reliability of application products. We resolve
to strive for the development and production of such
products so that we are able to fully respond to the
market’s needs.
32 Vol. 44 No. 1 FUJI ELECTRIC REVIEW
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7MBP75JB060

New Intelligent Power Modules

Fuji
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