DataSheet.jp

IRFZ48 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ48
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 



Total 9 pages
		

No Preview Available !

IRFZ48 Datasheet, IRFZ48 PDF,ピン配置, 機能
Power MOSFET
IRFZ48, SiHFZ48
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
60
VGS = 10 V
110
Qgs (nC)
29
Qgd (nC)
36
Configuration
Single
0.018
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFZ48PbF
SiHFZ48-E3
IRFZ48
SiHFZ48
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12).
c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).
LIMIT
60
± 20
50
50
290
1.3
100
50
19
190
4.5
- 55 to + 175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com

1 Page





ページ 合計 : 9 ページ
PDF
ダウンロード
[ IRFZ48.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRFZ40

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor
IRFZ40

(IRFZ42 / IRFZ40) N-Channel Enhancement Mode Power MOS Transistors

ST Microelectronics
ST Microelectronics
IRFZ40

(IRFZ40 - IRFZ45) N-Channel Power MOSFETS

Samsung Electronics
Samsung Electronics
IRFZ40

(IRFZ40 / IRFZ42) Power Field Effect Transistors

Motorola Semiconductor
Motorola Semiconductor

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap