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IRF6892STR1PBF の電気的特性と機能

IRF6892STR1PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6892STR1PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6892STR1PBF Datasheet, IRF6892STR1PBF PDF,ピン配置, 機能
PD - 97770
IRF6892STRPbF
IRF6892STR1PbF
DirectFET®plus MOSFET with Schottky Diode ‚
l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Ultra Low Package Inductance
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
l Optimized for Control FET Application
17nC 6.0nC 2.3nC 39nC 16nC 1.8V
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
GS
DS
SD
Applicable DirectFET Outline and Substrate Outline 
S3C
ISOMETRIC
S1 S2 S3C
M2 M4
L4 L6 L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25
±16
V
28
22
125
A
220
240 mJ
22 A
8.0 14.0
6.0
ID = 28A
12.0
10.0
ID= 22A
VDS= 20V
VDS= 13V
4.0 8.0 VDS= 5V
6.0
2.0 TJ = 125°C
4.0
0.0
2
TJ = 25°C
468
10 12 14 16
2.0
0.0
0
10 20 30 40 50
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 22A.
1
4/4/12
Free Datasheet http://www.Datasheet4U.com

1 Page





IRF6892STR1PBF pdf, ピン配列
IRF6892STR/TR1PbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
Max.
2.1
1.3
42
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.016
Max.
60
–––
–––
3.0
–––
Units
W
°C
Units
°C/W
W/°C
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„ TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
ˆ Used double sided cooling, mounting pad with large heatsink. Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3
Free Datasheet http://www.Datasheet4U.com


3Pages


IRF6892STR1PBF 電子部品, 半導体
IRF6892STR/TR1PbF
L
VCC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6
VGS
90%
10%
VDS
td(off) tf
td(on) tr
Fig 17b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.Datasheet4U.com

6 Page



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部品番号部品説明メーカ
IRF6892STR1PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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