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IRF6709S2TR1PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF6709S2TR1PBF |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF6709S2TR1PBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
PD - 97328A
IRF6709S2TRPbF
IRF6709S2TR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.8V
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The
reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at
higher frequencies. The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus
converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±20
12
9.7 A
39
100
51 mJ
10 A
30 14.0
ID = 12A
12.0 ID= 10A
VDS= 20V
20 10.0 VDS= 13V
8.0
10
TJ = 125°C
6.0
4.0
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.02mH, RG = 25Ω, IAS = 10A.
1
04/07/09 Free Datasheet http://www.Datasheet4U.com
1 Page IRF6709S2TR/TR1PbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
eÃLinear Derating Factor
Max.
1.8
1.3
21
270
-55 to + 175
Typ.
–––
12.5
20
–––
1.0
0.012
Max.
82
–––
–––
7.2
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
τ1
τ1
CiC= i=τi/τRi/iRi
τ2
τ2
τ3
τ3
R4R 4
R5R5
R6R6
R 7R7
R 8R8
τ4
τ4
τ5
τ5
τ6
τ6
τ7
τ7
τ8
τ8
Ri (°C/W) τi (sec)
3.82E-03 2.04E-03
2.77E-01 1.48E-01
6.99E-01 3.72E-01
R9R9 2.47E-01 1.32E-01
τA
τA
4.48E+00
2.39E+00
2.96E+00 1.58E+00
1.23E+01 6.58E+00
3.63E+01 1.94E+01
2.45E+01
13.06
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(At lower pulse widths ZthJA & ZthJC are combined)
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Mounted on minimum footprint full size board with metalized
TC measured with
Used double sided
thermocouple incontact with top (Drain) of
cooling, mounting pad with large heatsink.
part.
back and with small clip heatsink.
Rθ is measured at TJ of approximately
90°C.
Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3
Free Datasheet http://www.Datasheet4U.com
3Pages IRF6709S2TR/TR1PbF
100
Duty Cycle = Single Pulse
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming DTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
1
0.05
0.10
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 25°C
and Tstart = 150°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
1.0E+00
1.0E+01
Fig 16. Typical Avalanche Current Vs.Pulsewidth
60
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
50 ID = 10A
40
30
20
10
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF6709S2TR1PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF6709S2TR1PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF6709S2TR1PbF | Power MOSFET ( Transistor ) | International Rectifier |