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PDF IRF6691PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6691PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PROVISIONAL
PD - 97204
IRF6691PbF
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
IRF6691TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
47nC 15nC 4.4nC 26nC 30nC 2.0V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MT
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET
sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
20
±12
32
26
180 j
260
230
26
V
A
mJ
A
10
9
8
ID = 32A
7
6
5
4
3 TJ = 125°C
2
1 TJ = 25°C
0
2 3 4 5 6 7 8 9 10
6.0
5.0 ID= 17A
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.72mH, RG = 25Ω, IAS = 26A.
1
05/18/06Free Datasheet http://www.Datasheet4U.com
1 page  
PROVISIONAL
IRF6691PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
TJ = 150°C
TJ = 25°C
10
VGS = 0V
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
200
175
150
125
100
75
50
25
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
1000
800
600
100 100µsec
10 1msec
TA = 25°C
Tj = 150°C
Single Pulse
1
01
10msec
10 100
VDS, Drain-to-Source Voltage (V)
Fig10. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 12. Threshold Voltage vs. Temperature
ID
TOP
12A
15A
BOTTOM 26A
400
200
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
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