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IRF6613TRPBF の電気的特性と機能

IRF6613TRPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6613TRPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6613TRPBF Datasheet, IRF6613TRPBF PDF,ピン配置, 機能
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97087A
IRF6613PbF
IRF6613TRPbF
DirectFET™ Power MOSFET ‚
VDSS
40V
RDS(on) max
3.4m@VGS = 10V
4.1m@VGS = 4.5V
Qg(typ.)
42nC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST
MQ MX MT
MT
DirectFET™ ISOMETRIC
Description
The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for
synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Gate-to-Source Voltage
kContinuous Drain Current, VGS @ 10V
ÃhContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
kPower Dissipation
hPower Dissipation
hPower Dissipation
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
Linear Derating Factor
Max.
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
Units
V
A
W
mJ
A
W/°C
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to + 150
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hlJunction-to-Ambient
ilJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Case
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
1
7/3/06
Free Datasheet http://www.Datasheet4U.com

1 Page





IRF6613TRPBF pdf, ピン配列
1000
100
10
2.7V
TOP
BOTTOM
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
IRF6613PbF
1000
100
TOP
BOTTOM
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
2.7V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
100.0
10.0
TJ = 150°C
10
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 23A
VGS = 10V
1.5
1.0
0.1
1.5
TJ = 25°C
VDS = 15V
60µs PULSE WIDTH
2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
3.5
Fig 3. Typical Transfer Characteristics
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
12
ID= 18A
10
8
6
4
2
VDS= 32V
VDS= 20V
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.Datasheet4U.com


3Pages


IRF6613TRPBF 電子部品, 半導体
IRF6613PbF
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
-„ +
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
Re-Applied
+ Voltage
-
Body Diode
InIdnudcutcotor rCCuurerrnetnt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
G
D
S
S
D
D
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com

6 Page



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部品番号部品説明メーカ
IRF6613TRPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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