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PDF IRF6609TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6609TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97091A
IRF6609PbF
IRF6609TRPbF
l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
DirectFET Power MOSFET
VDSS
20V
RDS(on) max
2.0mΩ@VGS = 10V
2.6mΩ@VGS = 4.5V
Qg
46nC
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
DirectFET ISOMETRIC
SQ SX
Description
ST
MQ MX MT
The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
kContinuous Drain Current, VGS @ 10V
ÃhContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
kPower Dissipation
hPower Dissipation
hPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
20
±20
150
31
25
250
89
1.8
2.8
0.022
-40 to + 150
V
A
W
W/°C
°C
Parameter
hlRθJA Junction-to-Ambient
ilRθJA Junction-to-Ambient
jlRθJA Junction-to-Ambient
klRθJC
Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
Notes through are on page 10
www.irf.com
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
1
7/3/06Free Datasheet http://www.Datasheet4U.com
1 page  
IRF6609PbF
150 2.5
120
2.0
90 ID = 250µA
60
1.5
30
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.6784
17.299
τi (sec)
0.00086
0.57756
τ4τ4 17.566 8.94
9.4701 106
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Free Datasheet http://www.Datasheet4U.com
5 Page 
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF6609TRPBF.PDF ] | |
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