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IRF1404ZGPBF の電気的特性と機能

IRF1404ZGPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1404ZGPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF1404ZGPBF Datasheet, IRF1404ZGPBF PDF,ピン配置, 機能
PD - 96236A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Halogen-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
G
IRF1404ZGPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7m
S ID = 75A
TO-220AB
IRF1404ZGPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
www.irf.com
Max.
190
130
75
750
220
1.5
± 20
320
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/07/10
Free Datasheet http://www.Datasheet4U.com

1 Page





IRF1404ZGPBF pdf, ピン配列
IRF1404ZGPbF
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1
0.1
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
4.5V 20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 15V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
11.0
Fig 3. Typical Transfer Characteristics
www.irf.com
200
TJ = 175°C
160
120
TJ = 25°C
80
40
0
0
VDS = 15V
20µs PULSE WIDTH
40 80 120
ID, Drain-to-Source Current (A)
160
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
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3Pages


IRF1404ZGPBF 電子部品, 半導体
IRF1404ZGPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
600
ID
TOP
31A
500 53A
BOTTOM 75A
400
300
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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6 Page



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部品番号部品説明メーカ
IRF1404ZGPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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