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Datasheet 2SA1013 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SA1013Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & s
Toshiba Semiconductor
Toshiba Semiconductor
transistor
22SA1013PNP Transistor

2SA1013 █主要用途 PNP:音频输出及场扫描输出 █极限值(TA=25℃) 参数说明 集电极—基极电压 集电极—发射极电压 发射极—基极电压 集电极电流 集电极耗散功率 结温 TC=25℃ 参数符号 VCBO VCEO VEBO IC PC TJ 数值 -200 -170 -6.5 -1.5 1
Suoerltd
Suoerltd
transistor
32SA1013PNP Transistor

RoHS 2SA1013 2SA1013 FEATURE Power dissipation TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE PCM : 0.9 W (Tamb=25℃) Collector current ICM: -1A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTER
WEJ
WEJ
transistor
42SA1013PNP Silicon Epitaxial Planar Transistor

ST 2SA1013 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92L Plastic Package Weight approx. 0.38g Absolute Maximum R
SEMTECH
SEMTECH
transistor
52SA1013Plastic-Encapsulate Transistors

Taiwan Goodark Technology Co.,Ltd 2SA1013 Plastic-Encapsulate Transistors http://www.goodark.asia Free Datasheet http://www.Datasheet4U.com Taiwan Goodark Technology Co.,Ltd 2SA1013 Typical Characteristics http://www.goodark.asia Free Datasheet http://www.Datasheet4U.com
Goodark
Goodark
transistor


2SA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SA0683Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating
Panasonic Semiconductor
Panasonic Semiconductor
transistor
22SA0684Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SA0879Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base vo
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SA0885Transistor, Silicon PNP Epitaxial Type

Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t
Panasonic Semiconductor
Panasonic Semiconductor
transistor
52SA0886Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter volt
Panasonic Semiconductor
Panasonic Semiconductor
transistor
62SA100Ge PNP Drift

ETC
ETC
transistor
72SA1001Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY
Inchange Semiconductor
Inchange Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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