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IRGP4262DPBF の電気的特性と機能

IRGP4262DPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP4262DPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP4262DPBF Datasheet, IRGP4262DPBF PDF,ピン配置, 機能
VCES = 650V
IC = 40A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 24A
Applications
• Industrial Motor Drive
• UPS
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
IRGP4262DPbF
IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
CG
G
G
E
n-channel
G
Gate
E
C
G
IRGP4262DPbF
TO-247AC
C
Collector
E
C
G
IRGP4262D-EPbF
TO-247AD
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRGP4262DPBF
IRGP4262D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Quantity
25
Tube
25
Orderable Part Number
IRGP4262DPBF
IRGP4262D-EPBF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
60
40
96
96
45
27
±20
250
125
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.6
1.6
–––
–––
Units
°C/W
1 www.irf.com © 2013 International Rectifier
June 12, 2013
Free Datasheet http://www.Datasheet4U.com

1 Page





IRGP4262DPBF pdf, ピン配列
60
50
40
Square Wave:
VCC
30
I
20
Diode as specified
IRGP4262DPbF/IRGP4262D-EPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 108.7W
10
0.1
60
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
250
100
50 200
40
150
30
100
20
10 50
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
0
25 50 75 100 125 150 175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
1000
100
10µsec
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VCE (V)
1msec
DC
1000 10000
Fig. 4 - Forward SOA
TC = 25°C; TJ 175°C; VGE = 15V
3 www.irf.com © 2013 International Rectifier
100
10
1
10
100
VCE (V)
1000
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
June 12, 2013
Free Datasheet http://www.Datasheet4U.com


3Pages


IRGP4262DPBF 電子部品, 半導体
17
16 RG = 10
15
RG = 22
14
13 RG = 47
12
11 RG = 100
10
10 15 20 25 30 35 40 45 50
IF (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
17
16
15
14
13
12
11
10
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
400
300
200 RG = 10
RG = 22
100 RG = 47
RG = 100
0
0 10 20 30 40 50
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
6 www.irf.com © 2013 International Rectifier
IRGP4262DPbF/IRGP4262D-EPbF
17
16
15
14
13
12
11
10
0
20 40 60 80 100
RG (
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
2.5
48A
2.0 2210
47
24A
1.5 100
12A
1.0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
21 140
18 Tsc
Isc 120
15 100
12 80
9 60
6 40
3 20
8 10 12 14 16 18
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
June 12, 2013
Free Datasheet http://www.Datasheet4U.com

6 Page



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部品番号部品説明メーカ
IRGP4262DPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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