IRGP4078DPBF Datasheet PDF - International Rectifier
| Part Number | IRGP4078DPBF | |
| Description | INSULATED GATE BIPOLAR TRANSISTOR | |
| Manufacturers | International Rectifier | |
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IRGP4078DPbF
IRGP4078D-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
C
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
G
E
n-channel
G
VCES = 600V
INOMINAL = 50A
TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V
G
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(ON), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
C
G
E
C
G
IRGP4078DPbF
TO-247AC
IRGP4078D-EP
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
IRGP4078DPbF
IRGP4078D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRGP4078DPbF
IRGP4078D-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFSM @ TC = 25°C Diode Non Repetitive Peak Surge Current @ TJ = 25°C
IFRM @Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
74
50
150
200
44
25
120
79
±20
±30
278
139
-55 to +175
300
(0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
1 www.irf.com © 2012 International Rectifier
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
|
| |
 
1000
IRGP4078DPbF/EP
5000
tdOFF
100
tF
4000
3000
2000
EOFF
10
0
20 40 60 80 100
IC (A)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
1000
tdOFF
1000
0
20 40 60 80 100
Rg ()
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
20 350
Tsc
16
Isc
280
100 12 210
tF
8 140
10
0
20 40 60 80 100
RG ()
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
10000
1000
Cies
100
Coes
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
5 www.irf.com © 2012 International Rectifier
4 70
8 10 12 14 16 18
VGE (V)
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C
16
14 VCES= 400V
12 VCES = 300V
10
8
6
4
2
0
0 10 20 30 40 50 60 70
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 50A
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGP4078DPBF electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRGP4078DPBF.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRGP4078DPBF | The function is INSULATED GATE BIPOLAR TRANSISTOR. International Rectifier | |
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