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Número de pieza | IRGP4063D1-EPBF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! IRGP4063D1PbF
IRGP4063D1-EPbF
VCES = 600V
IC = 60A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
G
G
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 48A
Applica ons
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
E
C
G
IRGP4063D1PbF
C
Collector
E
C
G
IRGP4063D1‐EPbF
E
Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5µs short circuit SOA
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4063D1PbF
IRGP4063D1-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4063D1PbF
IRGP4063D1-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
600 V
100
60
200 A
192
30
15
120
±20 V
±30
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
330
170
-40 to +175
300 (0.063 in. (1.6mm) from case)
W
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min. Typ.
Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
––– –––
––– –––
––– 0.24
––– –––
0.45
2.4
–––
°C/W
40
1 www.irf.com © 2013 International Rectifier
June 24, 2013
Free Datasheet http://www.Datasheet4U.com
1 page 8
6
4
ICE = 24A
ICE = 48A
ICE = 96A
IRGP4063D1PbF/IRGP4063D1-EPbF
200
150
TJ = 25°C
TJ = 175°C
100
2 50
0
6 8 10 12 14 16 18
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
7
20
6
5 EON
4
3
EOFF
2
1
0
0 20 40 60 80 100 120
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V
6
0
6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage(V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tdON
tR
10
0
20 40 60 80 100 120
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V
1000
5 EOFF
4 EON
3
2
tdOFF
100
tdON
tF
tR
1
0 20 40 60 80 100 120
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V
5 www.irf.com © 2013 International Rectifier
10
0
20 40 60 80 100 120
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V
June 24, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRGP4063D1PbF/IRGP4063D1-EPbF
TO-247AD Part Marking Information
EXAM PLE:
TH IS IS A N IR G P 3 0 B 1 2 0 K D -E
W ITH A S S E M B L Y
LOT CODE 5657
ASSEM BLED ON WW 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
IN TE R N A TIO N A L
R E C TIF IE R
LO G O
ASSEM BLY
LO T CO DE
035H
56 57
PART NUM BER
D ATE CO DE
YEAR 0 = 2000
WEEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
June 24, 2013
Free Datasheet http://www.Datasheet4U.co
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRGP4063D1-EPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGP4063D1-EPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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