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IRGB4B60KPBF PDF Data sheet ( 特性 )

部品番号 IRGB4B60KPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB4B60KPBF Datasheet, IRGB4B60KPBF PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free.
G
C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
E
n-channel
PD - 95643A
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
VCES = 600V
IC = 6.8A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
TO-220
D2Pak
TO-262
IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθCS
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient
dRθJA Junction-to-Ambient (PCB Mount, steady state)
Wt Weight
www.irf.com
Max.
600
12
6.8
24
24
±20
63
31
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
2.4
–––
62
40
–––
Units
°C/W
g
1
11/18/04
Free Datasheet http://www.Datasheet4U.com

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