DataSheet.jp

IRG7PH50K10DPBF の電気的特性と機能

IRG7PH50K10DPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG7PH50K10DPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRG7PH50K10DPBFダウンロード(pdfファイル)リンクがあります。

Total 12 pages

No Preview Available !

IRG7PH50K10DPBF Datasheet, IRG7PH50K10DPBF PDF,ピン配置, 機能
  IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
VCES = 1200V
IC = 50A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 35A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 C
G
G 
G
E
n-channel
G
Gate
E
C
G
IRG7PH50K10DPbF 
C
Collector
E
C
G
 IRG7PH50K10DEPbF 
E
Emitter
Benefits
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
90
50
160
160
20
10
±30
400
160
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
1 www.irf.com © 2012 International Rectifier
Max.
0.3
1.4
–––
–––
Units
°C/W
January 09, 2013
Free Datasheet http://www.Datasheet4U.com

1 Page





IRG7PH50K10DPBF pdf, ピン配列
  IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
90
For both:
80 Duty cycle : 50%
Tj = 150°C
70 Tcase = 100°C
Gate drive as specified
60 Power Dissipation = 161W
50
40 Square Wave:
VCC
30
I
20
10
Diode as specified
0
0.1
1 10
f , Frequency ( kHz )
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 450
400
80
350
60 300
250
40 200
150
20 100
0
25 50 75 100 125 150
TC (°C)
50
0
25 50 75 100 125 150
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3 - Power Dissipation vs.
Case Temperature
1000
100
10µsec
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
DC
0.1
1
10 100 1000 10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C, VGE =15V
3 www.irf.com © 2012 International Rectifier
100
10
1
10
100 1000
VCE (V)
10000
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
January 09, 2013
Free Datasheet http://www.Datasheet4U.com


3Pages


IRG7PH50K10DPBF 電子部品, 半導体
 
18
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
14
RG = 
14
RG = 10
10
RG = 47
6
RG = 100
12
10
8
6
4
2
4 6 8 10 12 14
Fig. 18 - Typ. DIFio(Ad)e IRR vs. IF
TJ = 150°C
15
16
13
11
9
7
5
0 100 200 300 400 500
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 8A; TJ = 150°C
350
300 RG = 
250 RG =10
200
RG = 47
150
100 RG = 100
50
0
2 4 6 8 10 12 14 16 18
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6 www.irf.com © 2012 International Rectifier
2
0 20 40 60 80 100
RG ()
Fig. 19 - Typ. Diode IRR vs. RG
120
1800
1600
1400
1200
1000
800

600
400
200
0
100
16A

8A


4A
200 300 400 500
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
35 280
30 240
25
20 Tsc
200
Isc
160
15 120
10 80
5 40
10 11 12 13 14 15 16
VGE (V)
Fig. 23 - VCE vs. Short Circuit Time
Vcc= 600V; TC= 150°C
January 09, 2013
Free Datasheet http://www.Datasheet4U.com

6 Page



ページ 合計 : 12 ページ
 
PDF
ダウンロード
[ IRG7PH50K10DPBF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRG7PH50K10DPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap