DataSheet.jp

IRG7PH37K10D-EPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG7PH37K10D-EPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 12 pages
		

No Preview Available !

IRG7PH37K10D-EPBF Datasheet, IRG7PH37K10D-EPBF PDF,ピン配置, 機能
 
VCES = 1200V
IC = 25A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 15A
Applications
• Industrial Motor Drive
• UPS
Features
Low VCE(ON) and Switching Losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
IRG7PH37K10DPbF
IRG7PH37K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C  G
G
G
E
n-channel
G
Gate
E
C
G
IRG7PH37K10DPbF 
TO247AC 
C
Collector
E
C
G
IRG7PH37K10DEPbF 
TO247AD 
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRG7PH37K10DPBF
IRG7PH37K10D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Quantity
25
Tube
25
Orderable Part Number
IRG7PH37K10DPBF
IRG7PH37K10D-EPBF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
45
25
60
60
18
10
±30
216
86
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.6
1.7
–––
–––
Units
°C/W
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 4, 2013
Free Datasheet http://www.Datasheet4U.com

1 Page





ページ 合計 : 12 ページ
PDF
ダウンロード
[ IRG7PH37K10D-EPBF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRG7PH37K10D-EPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap