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PDF IRG7PH37K10D-EPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH37K10D-EPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VCES = 1200V
IC = 25A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 15A
Applications
• Industrial Motor Drive
• UPS
Features
Low VCE(ON) and Switching Losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
IRG7PH37K10DPbF
IRG7PH37K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C G
G
G
E
n-channel
G
Gate
E
C
G
IRG7PH37K10DPbF
TO‐247AC
C
Collector
E
C
G
IRG7PH37K10D‐EPbF
TO‐247AD
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRG7PH37K10DPBF
IRG7PH37K10D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Quantity
25
Tube
25
Orderable Part Number
IRG7PH37K10DPBF
IRG7PH37K10D-EPBF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
45
25
60
60
18
10
±30
216
86
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.6
1.7
–––
–––
Units
°C/W
1 www.irf.com © 2013 International Rectifier
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November 4, 2013
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1 page  
12
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
60
10
ICE = 7.5A
8 ICE = 15A
ICE = 30A
6
4
2
50
40
30
20 TJ = 25°C
TJ = 150°C
10
0
5
4.0
10 15
VGE (V)
20
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
3.0
2.0 EON
0
4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
tF
100
1.0 EOFF
0.0
0
10 20
IC (A)
30
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
2.6
2.2
EON
1.8
EOFF
1.4
tdON
tR
10
0
5
10 15 20 25 30
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
1000
tdOFF
tF
100
tdON
tR
1.0
0
20 40 60 80 100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 15A; VGE = 15V
5 www.irf.com © 2013 International Rectifier
10
0
20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 15A; VGE = 15V
Submit Datasheet Feedback
November 4, 2013
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5 Page 
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
TO-247AD Part Marking Information
EXAM PLE:
TH IS IS A N IR G P 3 0 B 1 2 0 K D -E
W ITH A S S E M B L Y
LOT CODE 5657
ASSEM BLED ON WW 35, 2000
IN TH E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
IN TE R N A TIO N A L
R E C TIF IE R
LO G O
ASSEM BLY
LOT CODE
035H
56 57
PART NUM BER
DATE CO DE
YEAR 0 = 2000
WEEK 35
LIN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 4, 2013
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRG7PH37K10D-EPBF.PDF ] | |
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