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IRG7PH28UD1PBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG7PH28UD1PBF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG7PH28UD1PBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
C
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF diode
1300Vpk repetitive transient capacity
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead-free package
G
E
n-channel
G
VCES = 1200V
IC = 15A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.95V
G
Benefits
Device optimized for induction heating and soft switching
applications
High efficiency due to low VCE(ON), low switching losses and
ultra-low VF
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
E
C
G
E
C
G
IRG7PH28UD1PbF
TO-247AC
IRG7PH28UD1MPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
V(BR) Transient
Repetitive Transient Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
1300
30
15
100
60
30
15
60
±30
115
46
-55 to +150
300
(0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
1 www.irf.com © 2012 International Rectifier
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
1 Page IRG7PH28UD1PbF/IRG7PH28UD1MPbF
30 120
25 100
20 80
15 60
10 40
5 20
0
25 50 75 100 125 150
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
4.2
4.0 IC = 350µA
3.8
3.6
3.4
3.2
3.0
2.8
2.6
25
50 75 100 125
TJ , Temperature (°C)
150
Fig. 3 - Typical Gate Threshold Voltage
vs. Junction Temperature
60
0
25 50 75 100 125 150
TC (°C)
Fig. 2 - Power Dissipation vs.
Case Temperature
100
10
1
10
60
100 1000
VCE (V)
10000
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
50
40 VGE = 18V
VGE = 15V
30 VGE = 12V
VGE = 10V
20 VGE = 8.0V
10
50
40 VGE = 18V
VGE = 15V
30 VGE = 12V
VGE = 10V
20 VGE = 8.0V
10
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
3 www.irf.com © 2012 International Rectifier
0
0 2 4 6 8 10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
3Pages IRG7PH28UD1PbF/IRG7PH28UD1MPbF
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01 0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R 1R 1
Ci= iRi
Ci= iRi
R 2R 2
2 2
0.0001
1E-006
1E-005
0.0001
0.001
Ri (°C/W)
i (sec)
R 3R 3
R 4R 4
0.015352 0.000008
3 3
4 4
CC
0.360775
0.000223
0.431394 0.002475
0.282479 0.01715
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1 D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
R 1R 1
R2R2
R 3R 3
R4R4
0.00756
J J
1 1
CC 0.56517
2 2
3 3
4 4
0.54552
Ci= iRi
Ci= iRi
0.25085
i (sec)
0.000005
0.000677
0.003514
0.019551
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6 www.irf.com © 2012 International Rectifier
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRG7PH28UD1PBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |