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PDF IRG7PH28UD1MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH28UD1MPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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IRG7PH28UD1PbF
IRG7PH28UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
C
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF diode
1300Vpk repetitive transient capacity
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead-free package
G
E
n-channel
G
VCES = 1200V
IC = 15A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.95V
G
Benefits
Device optimized for induction heating and soft switching
applications
High efficiency due to low VCE(ON), low switching losses and
ultra-low VF
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
E
C
G
E
C
G
IRG7PH28UD1PbF
TO-247AC
IRG7PH28UD1MPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
V(BR) Transient
Repetitive Transient Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
1300
30
15
100
60
30
15
60
±30
115
46
-55 to +150
300
(0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
1 www.irf.com © 2012 International Rectifier
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
2000
1600
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
1000
tdOFF
1200
800
EOFF
100 tF
400
0
0 5 10 15 20 25 30
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
1800
1600
1400
EOFF
1200
10
0
5 10 15 20 25 30
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
1000
tdOFF
100 tF
1000
800
0
20 40 60 80 100
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
10000
TJ =
1000
Cies
100
Coes
10 Cres
1
0 100 200 300 400 500 600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
5 www.irf.com © 2012 International Rectifier
10
0
20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 15A; VGE = 15V
16
14 VCES= 600V
12 VCES= 400V
10
8
6
4
2
0
0 10 20 30 40 50 60 70
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 15A
January 8, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
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