DataSheet.jp

IRG4BC40WLPBF の電気的特性と機能

IRG4BC40WLPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC40WLPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRG4BC40WLPBFダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

IRG4BC40WLPBF Datasheet, IRG4BC40WLPBF PDF,ピン配置, 機能
PD - 95788B
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Lead-Free
IRG4BC40WSPbF
IRG4BC40WLPbF
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
D2Pak
TO-262
IRG4BC40WSPbF IRG4BC40WLPbF
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted steady-state)
Weight
www.irf.com
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
02/19/10
Free Datasheet http://www.Datasheet4U.com

1 Page





IRG4BC40WLPBF pdf, ピン配列
50
40
30
Square wave:
60% of rated
voltage
20
10
0
0.1
Ideal diodes
1
IRG4BC40WS/LPbF
For both:
Duty cycle: 50%
TJ = 125°C
TGsaintek
= 90°C
drive as
specified
Power Dissipation = 28W
Triangular wave:
Clamp voltage:
80% of rated
10
f, Frequency (kHz)
100
A
1000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 °C
100
TJ = 150 °C
10
VGE = 15V
80µs PULSE WIDTH
1
1.0 2.0 3.0 4.0 5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
1000
100
TJ = 150 °C
10 TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 7 9 11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
Free Datasheet http://www.Datasheet4U.com


3Pages


IRG4BC40WLPBF 電子部品, 半導体
IRG4BC40WS/LPbF
2.0 RG =1100Ohm
TJ = 150° C
VCC = 480V
VGE = 15V
1.5
1.0
0.5
0.0
5
15 25 35
I C , Collector-to-emitter Current (A)
45
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGE
TJ
=
=
20V
125 oC
100
SAFE OPERATING AREA
10
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ IRG4BC40WLPBF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRG4BC40WLPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap