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GB10NB37LZ の電気的特性と機能

GB10NB37LZのメーカーはST Microelectronicsです、この部品の機能は「STGB10NB37LZ」です。


製品の詳細 ( Datasheet PDF )

部品番号 GB10NB37LZ
部品説明 STGB10NB37LZ
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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GB10NB37LZ Datasheet, GB10NB37LZ PDF,ピン配置, 機能
® STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK
INTERNALLY CLAMPED PowerMESHIGBT
TYPE
V CES
VCE(s at)
IC
STGB10NB37LZ CLAMPED < 1.8 V 10 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s AUTOMOTIVE IGNITION
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VECR
VGE
IC
IC
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM()
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
ESD ESD (Human Body Model)
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1999
Value
CLA M PE D
18
CLA M PE D
20
20
60
125
0. 83
4
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /o C
KV
oC
oC
1/8
Free Datasheet http://www.0PDF.com

1 Page





GB10NB37LZ pdf, ピン配列
STGB10NB37LZ
FUNCTIONAL CHARACTERISTICS
Symbo l
P ar am et e r
II Latching Current
U.I. S.
Unclamped Inductive
Switching Current
Functional Test
EAS Single Pulse
Avalanche Energy
EAR Reverse Avalanche
E ne rg y
Test Conditions
VCLAMP = 320 V
RGOFF = 1 K
VGE = 5 V
TC = 125 oC
RGOFF=1 KL =200 µH Tj = 125 oC
Min.
20
15
RGOFF=1 KL =3 mH
Tstart = 55 oC
Tstart = 55 oC
Tstart = 150 oC
Tc = 125 oC duty cycle < 1%
pulse width limited by tjmax
12
Typ.
Max.
215
150
10
Unit
A
A
A
mJ
mJ
mJ
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Eo n
P ar am et e r
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 320 V
VGE= 5 V
IC = 10 A
RG = 1 K
VCC = 320 V
RG = 1 K
IC = 10 A
VGE = 5 V
Min.
Typ.
520
340
17
180
Max.
Unit
ns
ns
A/µs
µJ
SWITCHING OFF
Symbo l
P ar am et e r
Test Conditions
Min. Typ. Max. Unit
tc
tr(voff)
tf
td (o ff)
Eo ff(**)
Cross-O ver Time
VCLAMP = 320 V
Off Volt age Rise Time RGE = 1 K
Fall Time
Off Voltage Delay Time
Turn-off Switching Loss
IC = 10 A
VGE = 5 V
4
2.2
1.5
14.8
4.0
µs
µs
µs
µs
mJ
tc
tr(voff)
tf
td (o ff)
Eo ff(**)
Cross-O ver Time
VCLAMP = 320 V
Off Volt age Rise Time RGE = 1 K
Fall Time
Off Volt age Delay Time Tj = 125 oC
Turn-off Switching Loss
IC = 10 A
VGE = 5 V
5.2
2.8
2
15.8
6.5
µs
µs
µs
µs
mJ
() Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**)Losses Include Also The Tail (jedec Standardization)
Safe Operating Area
Thermal Impedance
3/8
Free Datasheet http://www.0PDF.com


3Pages


GB10NB37LZ 電子部品, 半導体
STGB10NB37LZ
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
6/8
Free Datasheet http://www.0PDF.com

6 Page



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部品番号部品説明メーカ
GB10NB37LZ

STGB10NB37LZ

ST Microelectronics
ST Microelectronics


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