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H30R1202 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H30R1202
部品説明 Reverse Conducting IGBT
メーカ Infineon
ロゴ Infineon ロゴ 



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H30R1202 Datasheet, H30R1202 PDF,ピン配置, 機能
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3
Type
IHW30N120R2
VCE
1200V
IC
30A
VCE(sat),Tj=25°C
1.65V
Tj,max
175°C
Marking
H30R1202
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Value
1200
60
30
90
90
60
30
90
50
130
120
±20
±25
390
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com

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