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IRFR230A の電気的特性と機能

IRFR230AのメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFR230A
部品説明 Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRFR230A Datasheet, IRFR230A PDF,ピン配置, 機能
Advanced Power MOSFET
IRFR/U230A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.333 (Typ.)
BVDSS = 200 V
RDS(on) = 0.4
ID = 7.5 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
200
7.5
4.8
30
+_ 30
150
7.5
5
5.0
2.5
50
0.4
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC Junction-to-Case --
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient --
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.5
50
110
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
Free Datasheet http://www.0PDF.com

1 Page





IRFR230A pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
101 8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1.00
VGS = 10 V
0.75
0.50
0.25
VGS = 20 V
@ Note : TJ = 25 oC
0.00
0
5 10 15 20 25 30 35
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
800
C iss
600
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
400
C oss
200 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFR/U230A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
1.8
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
5
@ Notes : ID = 9.0 A
0
0 5 10 15 20 25
QG , Total Gate Charge [nC]
FreeDatasheethttp://www.0PDF.com


3Pages


IRFR230A 電子部品, 半導体
IRFR/U230A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
Free Datasheet http://www.0PDF.com

6 Page



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