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F2HNK60ZのメーカーはSTMicroelectronicsです、この部品の機能は「STF2HNK60Z」です。 |
部品番号 | F2HNK60Z |
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部品説明 | STF2HNK60Z | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとF2HNK60Zダウンロード(pdfファイル)リンクがあります。 Total 12 pages
STQ2HNK60ZR-AP
STF2HNK60Z - STD2HNK60Z-1
N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK
Zener-Protected SuperMESH™ MOSFET
TYPE
VDSS RDS(on)
ID
STQ2HNK60ZR-AP 600 V
STD2HNK60Z-1
600 V
STF2HNK60Z
600 V
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
0.5 A
2.0 A
2.0 A
TYPICAL RDS(on) = 4.4Ω
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
PW
3W
45 W
20 W
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-92 (Ammopack)
3
2
1
TO-220FP
IPAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
ORDER CODES
PART NUMBER
STD2HNK60Z-1
STQ2HNK60ZR-AP
STF2HNK60Z
MARKING
D2HNK60Z
Q2HNK60ZR
F2HNK60Z
PACKAGE
IPAK
TO-92
TO-220FP
PACKAGING
TUBE
AMMOPAK
TUBE
April 2004
1/12
Free Datasheet http://www.nDatasheet.com
1 Page STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3 3.75 4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.0 A
4.4 4.8
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 1.0 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 480V
VDD = 300 V, ID = 1.0 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 2.0 A,
VGS = 10V
Typ.
1.5
280
38
7
30
10
30
23
50
11
2.25
6
Max.
15
Unit
V
µA
µA
µA
V
Ω
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.0 A
8.0 A
VSD (1) Forward On Voltage
ISD = 2.0 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2.0 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 25°C
(see test circuit, Figure 5)
178 ns
445 nC
5A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 150°C
(see test circuit, Figure 5)
200 ns
500 nC
5A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
Free Datasheet http://www.nDatasheet.com
3Pages STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/12
Free Datasheet http://www.nDatasheet.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
F2HNK60Z | STF2HNK60Z | STMicroelectronics |