H30T100 Datasheet PDF - Infineon Technologies
| Part Number | H30T100 | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Infineon Technologies | |
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Soft Switching Series
IHW30N100T
q
Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology
with anti-parallel diode
Features:
• 1.1V Forward voltage of antiparallel rectifier diode
• Specified for TJmax = 175°C
• TrenchStop® and Fieldstop technology for 1000 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Applications:
• Microwave Oven
• Soft Switching Applications
Type
VCE
IHW30N100T 1000V
IC
30A
VCE(sat),Tj=25°C
1.55V
Tj,max Marking
175°C H30T100
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1000
60
30
90
90
22
12
36
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com
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Soft Switching Series
IHW30N100T
q
100A
80A
60A
40A
VGE=20V
15V
13V
11V
9V
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
100A
80A VGE=20V
15V
60A 13V
11V
40A 9V
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
100A
80A
60A
40A
TJ=175°C
20A
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=80A
2.0V
1.5V
1.0V
IC=40A
IC=20A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H30T100 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ H30T100.PDF Datasheet ] | |
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