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CPW3-1700S010 の電気的特性と機能

CPW3-1700S010のメーカーはCreeです、この部品の機能は「Silicon Carbide Schottky Diode Chip」です。


製品の詳細 ( Datasheet PDF )

部品番号 CPW3-1700S010
部品説明 Silicon Carbide Schottky Diode Chip
メーカ Cree
ロゴ Cree ロゴ 




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CPW3-1700S010 Datasheet, CPW3-1700S010 PDF,ピン配置, 機能
CPW3-1700S010–Silicon Carbide Schottky Diode Chip
Z-RecRectifier
Features
Chip Outline
VRRM = 1700 V
IF(AVG) = 10 A
Qc = 70 nC
• 1700-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Part Number
CPW3-1700S010B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF(AVG)
IFRM
IFSM
TJ , Tstg
Repetitive Peak Reverse Voltage
1700
Surge Peak Reverse Voltage
1700
DC Blocking Voltage
1700
Average Forward Current
10
Repetitive Peak Forward Surge Current
40.5
22.5
Non-Repetitive Peak Forward Surge Current
54
36.5
Operating Junction and Storage Temperature
-55 to
+175
V
V
V
A TJ=175˚C
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==11
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==11
˚C
1
1
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.7
3
10
50
Max.
2
3.5
50
200
QC Total Capacitive Charge
70 110
C Total Capacitance
880
80
60
Note:
1. Assumes θJ-C Thermal Resistance of 1.06˚C/W or less.
Unit
V
μA
nC
pF
Test Conditions
IIFF
=
=
1100AA T TJ=J=2157°5C°C
VVRR
=
=
1700
1700
V
V
TTJJ==2157°5C°C
VdiR/d=t 1=704000V,AI/Fμ=s 10 A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Subject to change without notice.
www.cree.com/power
Note
1
Free Datasheet http://www.nDatasheet.com

1 Page





CPW3-1700S010 pdf, ピン配列
Mechanical Parameters
Parameter
Die Size
Anode Pad Size
Anode Pad Opening
Thickness
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Chip Dimensions
A
3.78
D 1.40
2.50
C
Typ.
3.78 X 2.68
3.2 X 2.1
2.5 X 1.4
387 ± 10%
4
1.8
Unit
mm
mm
mm
μm
μm
μm
2.68 B
Symbol
A
B
C
D
Dimension
mm
inch
3.78
0.149
2.68
0.106
2.50
0.098
1.40
0.055
Part Number
CPW3-1700S010B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due
to an increase in adhesion over time die stored for an extended period may affix too strongly to the tape. These
die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend
that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2
– 3 weeks of delivery to assure 100% release of all die without issues.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
3 CPW3-1700S010 Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Free Datasheet http://www.nDatasheet.com


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部品番号部品説明メーカ
CPW3-1700S010

Silicon Carbide Schottky Diode Chip

Cree
Cree


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