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C4D10120EのメーカーはCreeです、この部品の機能は「Silicon Carbide Schottky Diode」です。 |
部品番号 | C4D10120E |
| |
部品説明 | Silicon Carbide Schottky Diode | ||
メーカ | Cree | ||
ロゴ | |||
このページの下部にプレビューとC4D10120Eダウンロード(pdfファイル)リンクがあります。 Total 6 pages
C4D10120E
Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Positive Temperature Coefficient on VF
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Solar Inverters
• Power Factor Correction
Package
VRRM = 1200 V
IF (TC=135˚C) = 16 A
Qc = 52 nC
TO-252-2
PIN 1
PIN 2
CASE
Part Number
C4D10120E
Package
TO-252-2
Marking
C4D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge
Current
Ptot Power Dissipation
Tc Maximum Case Temperature
TJ Operating Junction Range
Tstg Storage Temperature Range
1200
1300
1200
33
16
10
47
31
71
59
170
74
135
-55 to
+175
-55 to
+135
V
V
V
A TTTCCC===211535˚55C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
W TTCC==2151˚0C˚C
˚C
˚C
˚C
Note
1 C4D10120E Rev. B
Free Datasheet http://www.nDatasheet.com
1 Page Typical PerfCo4rDm10a1n20cEeCurrent Derating
18200
110
70
100
10% Duty
6900
20% Duty
30% Duty
80
50
70
50% Duty
70% Duty
DC
4600
50
30
40
2300
20
10
10
00
2255 5500 7755 110000 112255 115500
Tc CasTe TCem˚peCrature (°C)
117755
Figure 3. Current Derating
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
180.0
160.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
25 50 75 100 125 150 175
TC ˚C
Figure 4. Power Derating
800
700
600
500
400
300
200
100
0
0.1
1 10 100
VR (V)
1000
Figure 6. Capacitance vs. Reverse Voltage
3 C4D10120E Rev. B
Free Datasheet http://www.nDatasheet.com
3Pages Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6 C4D10120E Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Free Datasheet http://www.nDatasheet.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
C4D10120A | Silicon Carbide Schottky Diode | Cree |
C4D10120D | Silicon Carbide Schottky Diode | Cree |
C4D10120E | Silicon Carbide Schottky Diode | Cree |