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C5D50065DのメーカーはCreeです、この部品の機能は「Silicon Carbide Schottky Diode」です。 |
部品番号 | C5D50065D |
| |
部品説明 | Silicon Carbide Schottky Diode | ||
メーカ | Cree | ||
ロゴ | |||
このページの下部にプレビューとC5D50065Dダウンロード(pdfファイル)リンクがあります。 Total 6 pages
C5D50065D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
VRRM = 650 V
IF (TC=130˚C) = 50 A
Qc = 110 nC
Features
Package
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
TO-247-3
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Solar Inverters
• Motor Drives
• EV Chargers
• UPS
• Automotive
Part Number
C5D50065D
Package
TO-247-3
Marking
C5D50065
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
650 V
VRSM
Surge Peak Reverse Voltage
650 V
VDC
IF
IFRM
IFSM
IF,Max
Ptot
TJ , Tstg
DC Peak Blocking Voltage
650 V
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Operating Junction and Storage
Temperature
TO-247 Mounting Torque
100
50
46
153
106
400
330
2000
1600
300
130
-55 to
+175
1
8.8
TC=25˚C
A TC=130˚C
TC=135˚C
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
W
TC=25˚C
TC=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
1 C5D50065D Rev. -
Free Datasheet http://www.nDatasheet.com
1 Page Typical Performance
35500
30000 10% Duty
20% Duty
30% Duty
25500
50% Duty
70% Duty
DC
20000
15500
10000
5500
00
2255 5500 7755 110000 112255 115500 117755
TC (°C)
Figure 3. Current Derating
32255
30000
27755
25500
22255
20000
17755
15500
12255
10000
7755
5500
2255
00
2255 5500 7755 110000 112255 115500 117755
TcTCCas(e°TeCm)perature (°C)
Figure 4. Power Derating
112200
CCoonnddiittiioonnss::
110000
TTJJ== 2255°°CC
8800
6600
4400
2200
00
00 5500 110000 115500 220000 225500 330000 335500 440000
ReverseVVRolt(agVe,)VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
22000000
11880000
11660000
11440000
11220000
Conditions:
Figure 6. Power DeratinTCJog=n2d5i°tCions:
FVTFVttteJtee=essststtt==2==51212°5M5CMmmHHVzVz
11000000
880000
660000
440000
220000
00
00..11
11 1100 110000
ReversVeRVo(ltaVge), VR (V)
10100000
Figure 6. Typical Capacitance vs. Reverse Voltage
3 C5D50065D Rev. -
Free Datasheet http://www.nDatasheet.com
3Pages Diode Model
Diode Model CSD10060
V fVTfT==VTV+T+IfI*fR*TRT
VRRVTTTT====00..000952..209+09+(94T(T37j j*++*-((10TT..32JJ**59**7-110.000.--3300))0*1130)-5)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6 C5D50065D Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Free Datasheet http://www.nDatasheet.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
C5D50065D | Silicon Carbide Schottky Diode | Cree |