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CCS050M12CM2のメーカーはCreeです、この部品の機能は「50A Silicon Carbide Six-Pack (Three Phase) Module」です。 |
部品番号 | CCS050M12CM2 |
| |
部品説明 | 50A Silicon Carbide Six-Pack (Three Phase) Module | ||
メーカ | Cree | ||
ロゴ | |||
このページの下部にプレビューとCCS050M12CM2ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 25 mΩ
EOFF (TJ = 150˚C)
0.6 mJ
Features
• Ultra Low Loss
• Zero Reverse Recovery Current
• Zero Turn-off Tail Current
• High-Frequency Operation
•
•
Positive Temperature Coefficient
Cu Baseplate, AlN DBC
on
VF
and
VDS(on)
System Benefits
• Enables Compact and Lightweight Systems
• High Efficiency Operation
• Ease of Transistor Gate Control
• Reduced Cooling Requirements
• Reduced System Cost
Applications
•
•
•
•
•
•
Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Package
Part Number
CCS050M12CM2
Package
Six-Pack
Marking
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS Drain - Source Voltage
VGS Gate - Source Voltage
ID Continuous Drain Current
ID(pulse)
TJ
TC ,TSTG
Visol
LStray
M
G
PD
Pulsed Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
Power Dissipation
1.2
+25/-10
87
59
250
150
kV
V
A VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
A PRualtseeliwmidittehdtbP y=T2jm5a0x,TμCs= 25˚C
˚C
-40 to +125
2.5
˚C
kV DC, t = 1 min
30 nH Measured from pins 25-26 to 27-28
5.0 N-m
180 g
312
W TC = 25 ˚C, TJ ≤ 150 ˚C
Fig. 26
Fig. 28
Fig. 27
Subject to change without notice.
www.cree.com
1
Free Datasheet http://www.nDatasheet.com
1 Page Typical Performance
200
Conditions:
TJ = -40 °C
tp < 50 µs
160
VGS = 20 V
VGS = 15 V
200
Conditions:
TJ = 25 °C
tp < 50 µs
160
VGS = 20 V
VGS = 15 V
120 120
80
40 VGS = 10 V
VGS = 5 V
0
0 3 6 9 12 15
Drain-Source Voltage, VDS (V)
Figure 1. Typical Output Characteristics TJ = -40 ˚C
80 VGS = 10 V
40
VGS = 5 V
0
0 3 6 9 12 15
Drain-Source Voltage, VDS (V)
Figure 2. Typical Output Characteristics TJ = 25 ˚C
200
Conditions:
TJ = 150 °C
tp < 50 µs
160
120
VGS = 20 V
VGS = 15 V
VGS = 10 V
80
40
0
0
VGS = 5 V
3 6 9 12
Drain-Source Voltage, VDS (V)
15
Figure 3. Typical Output Characteristics TJ = 150 ˚C
60
Conditions:
VGS = 20 V
50 tp < 50 µs
40
TJ = 150 °C
TJ = 125 °C
30
TJ = 25 °C
20 TJ = -40 °C
10
0
0 25 50 75 100
Drain Source Current, IDS (A)
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
3 CCS050M12CM2,Rev. B
2.0
Conditions:
1.8 IDS = 50 A
VGS = 20 V
1.6 tp < 50 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
12
TJ = -40 °C
TJ = 25 °C
Conditions:
IDS = 50 A
tp < 50 µs
TJ = 150 °C
13 14 15 16 17 18 19 20
Gate Source Voltage, VGS (V)
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
Free Datasheet http://www.nDatasheet.com
3Pages Typical Performance
4.5
Conditions:
4.0
VDD = 800 V
TJ = 150 °C
L = 200 µH
3.5 RG = 20 Ohms
VGS = +20V/-5V
3.0
2.5
Eon
Eoff
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100
Drain to Source Current, IDS (A)
Figure 19. Inductive Switching Energy vs.
Drain Current For VDS = 800 V, RG = 20 Ω
10000
125
1000
td(off)
toff
100
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
10
1
tf
10
Drain-Source Current, IDS (A)
100
Figure 21. Turn-off Timing vs. Drain Current
10000
1000
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V
TJ = 25 °C
toff
100
td(off)
tr
100
ton
td(on)
tr
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
10
1
10
Drain-Source Current, IDS (A)
100
Figure 20. Turn-on Timing vs. Drain Current
1000
100
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V
TJ = 25 °C
ton
tr
td(on)
10
1
10 100
Gate Resistance, RG (Ohms)
Figure 22. Turn-on Timing vs. External Gate Resistor
100
ton
td(on)
tr
10
1
10 100
Gate Resistance, RG (Ohms)
Figure 23. Turn-off Timing vs. External Gate Resistor
6 CCS050M12CM2,Rev. B
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
RLoad = 16 Ohms
10
0 20 40 60 80 100 120 140 160
Junction Temperature, TJ (°C)
Figure 24. Turn-on Timing vs. Junction Temperature
Free Datasheet http://www.nDatasheet.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
CCS050M12CM2 | 50A Silicon Carbide Six-Pack (Three Phase) Module | Cree |