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CAS100H12AM1 の電気的特性と機能

CAS100H12AM1のメーカーはCreeです、この部品の機能は「100A Silicon Carbide Half-Bridge Module」です。


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部品番号 CAS100H12AM1
部品説明 100A Silicon Carbide Half-Bridge Module
メーカ Cree
ロゴ Cree ロゴ 




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CAS100H12AM1 Datasheet, CAS100H12AM1 PDF,ピン配置, 機能
CAS100H12AM1
1.2 kV, 100A Silicon Carbide
Half-Bridge Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
Ultra Low Loss
Zero Turn-off Tail Current from MOSFET
Zero Reverse Recovery Current from Diode
High-Frequency Operation
Positive Temperature
AlSiC Baseplate, AMB
CSoi3eNff4icSieunbtstornatVeF
and
VDS(on)
System Benefits
Enables Compact and Lightweight Systems
High Efficiency Operation
Ease of Transistor Gate Control
Reduced Cooling Requirements
Reduced System Cost
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 16 mΩ
EOFF (TJ = 125˚C)
1.8 mJ
Package
Applications
High Power Converters
Motor Drives
Solar Inverters
UPS and SMPS
Induction Heating
Part Number
Package
Marking
CAS100H12AM1 Half-Bridge Module CAS100H12AM1
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS
VGS
ID
ID(pulse)
TJ
TC ,TSTG
Visol
LStray
M
G
Pd
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current
Pulsed Drain Current
1.2
-5/+20
168
117
400
kV
V
A VGS = 20V, TC=25˚C
VGS = 20V, TC=90˚C
A Pulse width Limited by Tjmax,TC = 25˚C
Junction Temperature
150 ˚C
Case and Storage Temperature Range
-55 to +125 ˚C
Case Isolation Voltage
6 kV AC, t=1min
Stray Inductance
Mounting Torque
Weight
Clearance Distance
Creepage Distance
Power Dissipation
20
2.94
150
12.2
17.3
20.2
568
nH Measured from D1 to S2
Nm
g Measured without fasteners
mm Terminal to terminal
mm Terminal to terminal
mm Terminal to base plate
W
Subject to change without notice.
www.cree.com
Fig. 25
Fig 24
1
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1 Page





CAS100H12AM1 pdf, ピン配列
Free-Wheeling SiC Schottky Diode Characteristics
Symbol
Parameter
Min.
VSD Diode Forward Voltage
QC Total Capacitive Charge
tRR Reverse Recovery Time
ERR Reverse Recovery Energy
Typ.
1.8
2.5
1.6
47
0.5
Max.
2.2
Unit
Test Conditions
V IF = 100A, VGS = 0
IF = 100A, TJ = 150ºC
μC
ns
IF = 100A, VR = 600V
diF/dt = 2200A/μs, TJ = 25ºC
mJ
Note
Fig. 11
Fig. 12
Thermal Characteristics
Symbol
Parameter
Min. Typ. Max. Unit
RthJCM
RthJCD
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
0.22
0.35
0.24
0.37
˚C/W
Test Conditions
Note
Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based
modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and
module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation.
Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots.
Please Refer to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules.
3 CAS100H12AM1,Rev. C
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3Pages


CAS100H12AM1 電子部品, 半導体
Typical Performance
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
0
Conditions:
TJ = -55 °C
tp < 50 µs
-25
-50
VGS = 0 V
VGS = 5 V
VGS = 20 V
VGS = 15 V
VGS = 10 V
-75
-100
-125
-150
-175
Drain-Source Voltage, VDS (V)
-200
Figure 13. Typical 3rd Quadrant Characteristics
TJ = -55 ºC
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
0
Conditions:
TJ = 150 °C
tp < 50 µs
-25
VGS = 5 V
-50
VGS = 0 V
VGS = 20 V
VGS = 15 V
VGS = 10 V
-75
-100
-125
-150
-175
Drain-Source Voltage, VDS (V)
-200
Figure 15. Typical 3rd Quadrant Characteristics
TJ = 150 ºC
1.E-07
1.E-08
Conditions:
ftest = 1 MHz
VAC = 25 mV
Ciss
1.E-09
Coss
1.E-10
Crss
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
0
Conditions:
TJ = 25 °C
tp < 50 µs
-25
VGS = 5 V
-50
VGS = 0 V
VGS = 20 V
-75
-100
VGS = 15 V
-125
VGS = 10 V
-150
-175
Drain-Source Voltage, VDS (V)
-200
Figure 14. Typical 3rd Quadrant Characteristics
TJ = 25 ºC
1.E-07
1.E-08
Conditions:
ftest = 1 MHz
VAC = 25 mV
Ciss
Coss
1.E-09
1.E-10
Crss
1.E-11
0
20 40 60 80
Drain-Source Voltage, VDS (V)
100
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 100V)
20
Conditions:
IDS = 100 A
15
IGS = 50 mA
VDS = 800 V
TJ = 25 °C
10
5
0
1.E-11
0
100 200 300 400 500
Drain-Source Voltage, VDS (V)
600
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 600V)
-5
0
100 200 300 400
Gate-Source Voltage, VGS (V)
Figure 18. Typical Gate Charge Characteristic
500
6 CAS100H12AM1,Rev. C
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6 Page



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部品番号部品説明メーカ
CAS100H12AM1

100A Silicon Carbide Half-Bridge Module

Cree
Cree


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