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PDF CPM2-1200-0025B Data sheet ( Hoja de datos )
| Número de pieza | CPM2-1200-0025B | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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VDS
1200 V
CPM2-1200-0025B
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 120˚C 50 A
RDS(on)
25 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
EV Chargers
UPS
Part Number
CPM2-1200-0025B
Package
Die
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
107
50
150
A VGS@20 V, TC = 25˚C
VGS@20 V, TC = 120˚C
A Pulse width tP limited by Tjmax
TC = 25˚C
VGS Gate Source Voltage
-10/+25 V
TJ , Tstg Operating Junction and Storage Temperature
-55 to
+150
˚C
TL Solder Temperature
260 ˚C
Note (1): Assumes a RθJC < 0.32 K/W
f
Note
Note 1
1 CPM2-1200-0025B Rev. -
Free Datasheet http://www.nDatasheet.com
1 page  
Typical Performance
Conditions
3
VDS = 600 V
VGS = -5V/+20 V
RG = 2.5 Ohms
TJ = 25 °C
FWD: C4D30120D
L = 856 µH
2
1
ETOT
EON
EOFF
5
Conditions
VDS = 800 V
4
VGS = -5V/+20 V
RG = 2.5 Ohms
TJ = 25 °C
FWD: C4D30120D
L = 856 µH
3
2
1
ETOT
EON
EOFF
0
0 25 50 75
Drain-Source Current, IDS (A)
Figure 13. Inductive Switching Loss vs Drain Current
VDS = 600V (Note (2))
10000
Ciss
0
0 25 50 75
Drain-Source Current, IDS (A)
Figure 14. Inductive Switching Loss vs Drain Current
VDS = 800V (Note (2))
10000
Ciss
1000
Coss
100
Crss
10
Conditions:
ftest = 1 MHz
Vtest = 25 mV
1
0 50
100 150
Drain-Source Voltage, VDS (V)
200
250
1000
Coss
100
Crss
10
Conditions:
ftest = 1 MHz
Vtest = 25 mV
1
0
250 500 750
Drain-Source Voltage, VDS (V)
Figure 15A and 15B. Typical Capacitances vs. Drain Voltage at VGS = 0 V and f = 1 MHz
20
Conditions:
VDS = 800 V
15
IDS = 20 A
IGS = 10 mA
10
2.5
Conditions
VDS = 800 V
VGS = -5V/+20 V
2.0 IDS = 50 A
TJ = 25 °C
FWD: C4D30120D
L = 856 µH
1.5
EOFF
EON
1000
5 1.0
0 0.5
-5
0 30 60 90 120 150 180
Gate Charge (nC)
Figure 16. Typical Gate Characteristic 25 ºC
0.0
0
3 6 9 12 15 18
Gate Resistance, RG (Ohms)
Figure 17. Inductive Switching Loss VS Gate Resistance
(Note (2))
5 CPM2-1200-0025B Rev. -
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CPM2-1200-0025B.PDF ] | |
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