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PDF CPM2-1200-0160B Data sheet ( Hoja de datos )
| Número de pieza | CPM2-1200-0160B | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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VDS
1200 V
CPM2-1200-0160B
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 17.7 A
RDS(on)
160 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
Benefits
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
Auxiliary Power Supplies
Solar Inverters
High Voltage DC/DC Converters
PFC Boost Circuits
Part Number
Package
CPM2-1200-0160B
Die
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
17.7
11
45
A VGS@20 V, TC = 25˚C
VGS@20 V, TC = 100˚C
A Pulse width tP = 50 μs
duty limited by Tjmax, TC = 25˚C
VGS Gate Source Voltage
-10/+25 V
TJ , Tstg Operating Junction and Storage Temperature
-55 to
+150
˚C
TL
TPROC
Solder Temperature
Maximum Processing Temperature
260
325
˚C
˚C 10min Maximum
Note 1: Assumes a RθJC < 0.90 K/W
f
Note
Note 1
1 CPM2-1200-0160B Rev. -
Free Datasheet http://www.nDatasheet.com
1 page  
Typical Performance
-5 -4
Conditions:
TJ = -55 °C
tp < 50 µs
-3
VGS = 0 V
-2
VGS = 5 V
-1 0
0
VGS = 10 V
-5
-10
VGS = 15 V
-15
-20
VGS = 20 V
-25
Drain-Source Voltage, VDS (V)
-30
Figure 13. Typical 3rd Quadrant Characteristic
at TJ = -55 ºC
-5 -4 -3 -2 -1
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = 0 V
VGS = 10 V VGS = 5 V
VGS = 15 V
0
0
-5
VGS = 20 V
-10
-15
-20
-25
Drain-Source Voltage, VDS (V)
-30
Figure 15. Typical 3rd Quadrant Characteristic
at TJ = 150 ºC
1000
Ciss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
100
Coss
-5 -4
Conditions:
TJ = 25 °C
tp < 50 µs
-3
VGS = 0 V
-2 -1
VGS = 5 V
0
0
-5
VGS = 10 V
VGS = 15 V
VGS = 20 V
-10
-15
-20
-25
Drain-Source Voltage, VDS (V)
Figure 14. Typical 3rd Quadrant Characteristic
at TJ = 25 ºC
30
-30
25
20
15
10
5
0
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Figure 16. Typical Transfer Characteristic
1000
100
Ciss
Conditions:
TJ = 25 °C
VAC = 25 mV
Coss f = 1 MHz
10
Crss
1
0 200 400 600 800 1000
Drain-Source Voltage, VDS (V)
Figure 17. Typical Capacitances vs Drain Voltage
(0-1000 V)
10 Crss
1
0 50 100 150 200
Drain-Source Voltage, VDS (V)
Figure 18. Typical Capacitances vs Drain Voltage
(0-200 V)
5 CPM2-1200-0160B Rev. -
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CPM2-1200-0160B.PDF ] | |
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