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PDF CMF20120D Data sheet ( Hoja de datos )
| Número de pieza | CMF20120D | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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CMF20120D-Silicon Carbide Power MOSFET
VDS
1200 V
Z-FeTTM MOSFET
ID(MAX)
42 A
N-Channel Enhancement Mode RDS(o n) 80mΩ
Features
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Package
TO-247-3
Part Number
CMF20120D
Package
TO-247-3
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
ID Continuous Drain Current
IDpulse Pulsed Drain Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
42 A VGS@20V, TC = 25˚C
24 VGS@20V, TC = 100˚C
90 A Pulse width tP limited by Tjmax
TC = 25˚C
2.2
J
ID = 20A, VDD = 50 V,
L = 9.5 mH
1.5 J tAR limited by Tjmax
Fig. 10
Fig. 15
IAR Repetitive Avalanche Current
20 A ID = 20A, VDD = 50 V, L = 3 mH
tAR limited by Tjmax
VGS Gate Source Voltage
-5/+25 V
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
215
-55 to
+135
260
1
8.8
W TC=25˚C
˚C
Fig. 9
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 CMF20120D Rev. D
Free Datasheet http://www.nDatasheet.com
1 page  
Typical Performance
10000
10000
1000
Ciss
1000
Ciss
Coss
100
Coss
100
10
0
70
60
50
40
Crss
20 40 60 80 100 120 140 160 180 200
VDS (V)
10
0
Crss
100 200 300 400 500 600
VDS (V)
Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS = 0V and f = 1 MHz
25
20
IDS
15
700 800
2500
VDS
2000
1500
3 0 10 1000
2 0 EAS = 2.20 J
5 500
10
0
0
140
120
100
80
60
40
20
100 200 300 400 500 600 700
VDS (V)
Figure 14. Typical COSS Stored Energy
800
VGS = 0/20V
VDD = 400V
RL = 20 Ω
ID = 20 A
TA = 25oC
tD(off)v
trv
tfv
tD(on)v
00
0
0.001
0.002
0.003
0.004
0.005
0.006
Time (s)
Figure 15. Typical Unclamped Inductive Switching
Waveforms Showing Avalanche Capability
140
120
VGS = 0/20V
VDD = 800V
RL = 40 Ω
100
ID = 20 A
TA = 25oC
80
60
tD(off)v
trv
tfv
40
tD(on)v
20
0
0 5 10 15 20 25
External Gate Resistor (Ω)
Figure 16. Resistive Switching Times vs.
External RG at VDD = 400V, ID = 20A
0
0 5 10 15 20 25
External Gate Resistor (Ω)
Figure 17. Resistive Switching Times vs.
External RG at VDD = 800V, ID = 20A
5 CMF20120D Rev. D
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CMF20120D.PDF ] | |
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