|
|
Datasheet C2M0160120D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C2M0160120D | Silicon Carbide Power MOSFET
VDS
1200 V 17.7 A 160 mΩ
C2M0160120D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID(MAX) @ 25˚C RDS(on)
N-Channel Enhancement Mode • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Paralle |  Cree | mosfet |
C2M Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C2M0025120D | Silicon Carbide Power MOSFET VDS 1200 V
C2M0025120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
90 A
RDS(on) 25 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel Cree mosfet | | |
| 2 | C2M0040120D | Silicon Carbide Power MOSFET VDS 1200 V
C2M0040120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
60 A
RDS(on) 40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel Cree mosfet | | |
| 3 | C2M0045170D | Silicon Carbide Power MOSFET VDS 1700 V
C2M0045170D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel Cree mosfet | | |
| 4 | C2M0080120D | Silicon Carbide Power MOSFET
VDS
1200 V
C2M0080120D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID @ 25˚C 31.6 A RDS(on) 80 mΩ
N-Channel Enhancement Mode • • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel an Cree mosfet | | |
| 5 | C2M0160120D | Silicon Carbide Power MOSFET
VDS
1200 V 17.7 A 160 mΩ
C2M0160120D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID(MAX) @ 25˚C RDS(on)
N-Channel Enhancement Mode • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Paralle Cree mosfet | | |
| 6 | C2M0280120D | Silicon Carbide Power MOSFET VDS 1200 V
C2M0280120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C 10 A
RDS(on)
280 mΩ
N-Channel Enhancement Mode
Features
Package
• New C2M SiC MOSFET technlogy • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low C Cree mosfet | | |
| 7 | C2M1000170D | Silicon Carbide Power MOSFET
VDS
1700 V
C2M1000170D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID @ 25˚C 4.9 A RDS(on) 1.0 Ω
N-Channel Enhancement Mode • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simp Cree mosfet | |
| Esta página es del resultado de búsqueda del C2M0160120D. Si pulsa el resultado de búsqueda de C2M0160120D se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |