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C2M0080120D の電気的特性と機能

C2M0080120DのメーカーはCreeです、この部品の機能は「Silicon Carbide Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 C2M0080120D
部品説明 Silicon Carbide Power MOSFET
メーカ Cree
ロゴ Cree ロゴ 




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C2M0080120D Datasheet, C2M0080120D PDF,ピン配置, 機能
VDS
1200 V
C2M0080120D
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 31.6 A
RDS(on)
80 m
N-Channel Enhancement Mode
Features
Package
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
TO-247-3
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Part Number
C2M0080120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
VGS Gate Source Voltage
31.6
20
80
A VGS@20 V, TC = 25˚C
VGS@20 V, TC = 100˚C
A Pulse width tP = 50 μs
duty limited by Tjmax, TC = 25˚C
-10/+25 V
Fig. 16
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
208
-55 to
+150
260
1
8.8
W TC=25˚C
˚C
Fig. 15
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M0080120D Rev. A
Free Datasheet http://www.nDatasheet.com

1 Page





C2M0080120D pdf, ピン配列
Typical Performance
100
Conditions:
TJ = -55 °C
tp = 50 µs
80
60
40
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
20 VGS = 10 V
0
0 3 6 9 12 15 18
Drain-Source Voltage VDS (V)
Figure 1. Typical Output Characteristics TJ = -55 ºC
80
Conditions:
TJ = 150 °C
tp = 50 µs
60
40
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
VGS = 10 V
20
100
Conditions:
TJ = 25 °C
tp = 50 µs
80
60
40
20
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
VGS = 10 V
0
0 3 6 9 12 15 18
Drain-Source Voltage VDS (V)
Figure 2. Typical Output Characteristics TJ = 25 ºC
40
Parameters:
VDS = 20 V
30
150 °C
20
25 °C
10
0
0 3 6 9 12 15 18
Drain-Source Voltage VDS (V)
Figure 3. Typical Output Characteristics TJ = 150 ºC
2.3
Parameters:
2.0
VGS = 20 V
IDS = 20 A
1.8
1.5
1.3
1.0
0.8
0.5
-50
-25
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 5. Normalized On-Resistance vs. Temperature
0
0 2 4 6 8 10 12 14
Gate-Source Voltage, VGS (V)
Figure 4. Typical Transfer Characteristics
0.20
Parameters:
VGS = 20 V
150 °C
0.16
125 °C
100 °C
0.12
75 °C
0.08
25 °C
0 °C
-55 °C
0.04
0
10 20 30
Drain-Source Current, IDS (A)
Figure 6. On-Resistance vs. Drain Current
40
3 C2M0080120D Rev. A
Free Datasheet http://www.nDatasheet.com


3Pages


C2M0080120D 電子部品, 半導体
Typical Performance
20
Conditions:
VDS = 800 V
16
IDS = 20 A
IGS = 10 mA
TJ = 25 C
12
8
4
0
0 10 20 30 40
Gate-Source Charge, QGS (nC)
Figure 19. Typical Gate Characteristic 25 ºC
50
500
Conditions:
VGS = 0 / 20 V
RG = 2.5
400 VDS = 800 V
L = 856 µH
FWD = C4D10120
TJ = 25 °C
300
ETOT,SW
EON
200
EOFF
100
0
0 5 10 15 20
Peak Drain-Source Current, IDS (A)
Figure 21. Clamped Inductive Switching Energy vs.
Drain Current (Fig. 24)
80
Conditions:
70
VGS = 0 / 20 V
VDS = 800 V
RL = 40
60 IDS = 20 A
TJ = 25 °C
50
40
tD(off)
tr
tf
30
20 tD(on)
10
0
0 5 10 15 20
External Gate Resistor ()
Figure 20. Resistive Switching Times vs. RG
600
ETOT,SW
500
25
400
300 EON
200
100
0
25
EOFF Conditions:
VGS = 0 / 20 V
RG = 6.8
VDS = 800 V
L = 856 µH
FWD = C4D10120
IDS = 20 A
50 75 100 125
Junction Temperature, TJ (°C)
150
Figure 22. Clamped Inductive Switching Energy vs.
Junction Temperature (Fig. 24)
6 C2M0080120D Rev. A
Free Datasheet http://www.nDatasheet.com

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部品番号部品説明メーカ
C2M0080120D

Silicon Carbide Power MOSFET

Cree
Cree


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