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PDF MT4C1M16C3 Data sheet ( Hoja de datos )
| Número de pieza | MT4C1M16C3 | |
| Descripción | 1 MEG x 16 FPM DRAM | |
| Fabricantes | Micron | |
| Logotipo |  |
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FPM DRAM
1 MEG x 16
FPM DRAM
MT4C1M16C3, MT4LC1M16C3
For the latest data sheet revisions, please refer to the Micron
Web site: www.micron.com/datasheets
FEATURES
• JEDEC- and industry-standard x16 timing,
functions, pinouts, and packages
• High-performance, low-power CMOS silicon-gate
process
• Single power supply (+3.3V ±0.3V or 5V ±0.5V)
• All inputs, outputs and clocks are TTL-compatible
• Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS#
(CBR) and HIDDEN
• Optional self refresh (S) for low-power data
retention
• BYTE WRITE and BYTE READ access cycles
• 1,024-cycle refresh (10 row, 10 column addresses)
• FAST-PAGE-MODE (FPM) access
OPTIONS
• Voltage1
3.3V
5V
MARKING
LC
C
• Packages
Plastic SOJ (400 mil)
Plastic TSOP (400 mil)
• Timing
50ns access
60ns access
• Refresh Rates
Standard Refresh (16ms period)
Self Refresh (128ms period)
• Operating Temperature Range
Commercial (0oC to +70oC)
Extended (-20oC to +80oC)
DJ
TG
-5
-6
None
S2
None
ET3
Part Number Example:
MT4LC1M16C3DJ-5
NOTE: 1. The third field distinguishes the low voltage offering:
LC designates VCC = 3.3V and C designates VCC = 5V.
2. Contact factory for availability.
3. Available only on MT4C1M16C3 (5V)
KEY TIMING PARAMETERS
SPEED
-5
-6
tRC
84ns
110ns
tRAC
50ns
60ns
tPC
20ns
35ns
tAA
25ns
30ns
tCAC
15ns
15ns
tRP
30ns
40ns
PIN ASSIGNMENT (Top View)
42-Pin SOJ
44/50-Pin TSOP
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
NC
WE#
RAS#
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 VSS
41 DQ15
40 DQ14
39 DQ13
38 DQ12
37 VSS
36 DQ11
35 DQ10
34 DQ9
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
33 DQ8
32 NC
NC
31 CASL#
NC
30
CASH#
WE#
RAS#
29 OE#
NC
28 A9
27 A8
NC
A0
A1
26 A7
A2
25 A6
24 A5
A3
VCC
23 A4
22 VSS
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
NOTE: The # symbol indicates signal is active LOW.
VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
NC
NC
CASL#
CASH#
OE#
A9
A8
A7
A6
A5
A4
VSS
1 MEG x 16 FPM DRAM PART NUMBERS
PART NUMBER
MT4LC1M16C3DJ-6
MT4LC1M16C3DJ-6 S
MT4LC1M16C3TG-6
MT4LC1M16C3TG-6 S
MT4C1M16C3DJ-6
MT4C1M16C3TG-6
SUPPLY PACKAGE REFRESH
3.3V
SOJ Standard
3.3V SOJ Self
3.3V
TSOP Standard
3.3V
TSOP
Self
5V SOJ Standard
5V TSOP Standard
GENERAL DESCRIPTION
The 1 Meg x 16 DRAM is a randomly accessed, solid-
state memory containing 16,777,216 bits organized in
a x16 configuration. The 1 Meg x 16 DRAM has both
BYTE WRITE and WORD WRITE access cycles via two
CAS# pins (CASL# and CASH#). These function identi-
cally to a single CAS# on other DRAMs in that either
CASL# or CASH# will generate an internal CAS#.
The CAS# function and timing are determined by
the first CAS# (CASL# or CASH#) to transition LOW and
1 Meg x 16 FPM DRAM
D51_5V_B.p65 – Rev. B; Pub 3/01
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
Free Datasheet http://www.nDatasheet.com
1 page  
ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Pin Relative to VSS
3.3V ..................................................... -1V to +4.6V
5V ........................................................... -1V TO +7V
Voltage on NC, Inputs or I/O Pins Relative to VSS
3.3V ..................................................... -1V to +5.5V
5V ........................................................... -1V TO +7V
Operating Temperature
TA (commercial) ...................................... 0°C to +70°C
TA (extended "ET") ............................ -20°C to +80°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
1 MEG x 16
FPM DRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes can be found on page 9); VCC (MIN) ≤ VCC ≤ VCC (MAX)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE:
Valid Logic 1; All inputs, I/Os and any NC
INPUT LOW VOLTAGE:
Valid Logic 0; All inputs, I/Os and any NC
INPUT LEAKAGE CURRENT:
Any input at VIN (0V ≤ VIN ≤ VCC + 0.3V);
All other pins not under test = 0V
OUTPUT HIGH VOLTAGE:
IOUT = -2mA
OUTPUT LOW VOLTAGE:
IOUT = 2mA
OUTPUT LEAKAGE CURRENT:
Any output at VOUT [0V ≤ VOUT ≤ VCC (MAX)];
DQ is disabled and in High-Z state
SYMBOL
VCC
3.3V
MIN MAX
3 3.6
5V
MIN MAX UNITS NOTES
4.5 5.5
V
VIH 2 5.5 2.4 VCC + 1 V
VIL
-1.0 0.8 -0.5 0.8
V
II -2 2 -2 2 µA
VOH 2.4 – 2.4 –
V
VOL – 0.4 – 0.4 V
IOZ -5 5 -5 5 µA
1 Meg x 16 FPM DRAM
D51_5V_B.p65 – Rev. B; Pub 3/01
5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
Free Datasheet http://www.nDatasheet.com
5 Page 
RAS#
V
V
IH
IL
CASL#/CASH#
V
V
IH
IL
ADDR
V
V
IH
IL
WE#
V
V
IH
IL
DQ
V
V
IOH
IOL
OE#
V
V
IH
IL
READ CYCLE
tRC
tRAS
tRP
tCRP
tRCD
tCSH
tRSH
tCAS
tCLCH
tRRH
tASR
tRAD
tRAH
ROW
tAR
tASC
tCAH
tRCS
COLUMN
tRCH
OPEN
tAA
tRAC
tCAC
tCLZ
tOE
tOFF
VALID DATA
tOD
1 MEG x 16
FPM DRAM
ROW
OPEN
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL
tAA
tAR
tASC
tASR
tCAC
tCAH
tCAS
tCLCH
tCLZ
tCRP
tCSH
tOD
tOE
-5
MIN
MAX
25
38
0
0
15
8
8 10,000
10
0
5
38
0 12
12
MIN
45
0
0
10
10
10
0
5
45
0
-6
MAX
30
15
10,000
15
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tOFF
tRAC
tRAD
tRAH
tRAS
tRC
tRCD
tRCH
tRCS
tRP
tRRH
tRSH
-5
MIN
MAX
0 12
50
9
9
50 10,000
84
11
0
0
30
0
13
MIN
0
12
10
60
104
14
0
0
40
0
15
-6
MAX
15
60
10,000
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1 Meg x 16 FPM DRAM
D51_5V_B.p65 – Rev. B; Pub 3/01
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
Free Datasheet http://www.nDatasheet.com
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet MT4C1M16C3.PDF ] | |
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