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MDF11N60
N-Channel MOSFET 600V, 11A, 0.55Ω
General Description
The MDF11N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF11N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 11A
RDS(ON) ≤ 0.55Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jun 2011 Version 2.3
1
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
11
6.9
44
49
0.39
4.5
720
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.55
Unit
oC/W
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheetlist.com/
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Jun 2011 Version 2.3
Symbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
¢R
Min
4.50
0.63
1.15
0.33
15.47
9.60
2.34
6.48
12.24
2.79
2.52
3.10
3.00
Nom
2.54
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.84
6.90
13.72
3.67
2.96
3.50
3.55
5 MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheetlist.com/