|
|
HE9014のメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「NPN EPITAXIAL PLANAR TRANSISTOR」です。 |
部品番号 | HE9014 |
| |
部品説明 | NPN EPITAXIAL PLANAR TRANSISTOR | ||
メーカ | Hi-Sincerity Mocroelectronics | ||
ロゴ | |||
このページの下部にプレビューとHE9014ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6102
Issued Date : 1992.08.25
Revised Date : 2002.04.10
Page No. : 1/4
HE9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9014 is designed for use in pre-amplifier of low level and low
noise.
Features
• High Total Power Dissipation (PD: 450mW)
• Complementary to HE9015
• High hFE and Good Linearity
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Cob
fT
Min.
50
45
5
-
-
-
-
0.58
100
-
150
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
2.20
270
Classification on hFE
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
100-300
C
200-600
D
400-1000
HE9014
HSMC Product Specification
1 Page HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6102
Issued Date : 1992.08.25
Revised Date : 2002.04.10
Page No. : 3/4
Capacitance & Reverse-Biased Voltage
100
Cutoff Frequency & Collector Current
1000
10
Cob
1
0.1 1 10
Reverse-Biased Voltage (V)
10000
1000
PT=1ms
Safe Operating Area
PT=100ms
PT=1s
100
10
1
1 10
Forward Voltage-VCE (V)
100
100
100
10
1
VCE=1V
10 100
Collector Current (mA)
1000
HE9014
HSMC Product Specification
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ HE9014 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HE9012 | PNP EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
HE9013 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
HE9014 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
HE9015 | PNP EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |