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IR2112SPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IR2112SPBF
部品説明 HIGH AND LOW SIDE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IR2112SPBF Datasheet, IR2112SPBF PDF,ピン配置, 機能
Data Sheet No. PD60026 revS
IR2112(-1-2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
125 & 105 ns
Delay Matching
30 ns
Packages
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
16-Lead SOIC (wide body)
and latch immune CMOS technologies enable rugge-
14-Lead PDIP
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts.
Typical Connection
up to 600V
VDD
HIN
SD
LIN
VSS
VCC
HO
VDD
HIN
SD
VB
VS
LIN VCC
VSS COM
LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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