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PDF HF10N60 Data sheet ( Hoja de datos )
| Número de pieza | HF10N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ETC | |
| Logotipo |  |
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Features
■ RDS(on) (Max 0.85 Ω )@VGS=10V
■ Gate Charge (Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
■
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
HF10N60
N-Channel MOSFET
Symbol
1. Gate
2. Drain
●
◀▲
●
●
3. Source
TO-220F
123
Absolute Maximum Ratings
(* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
620
10
5
30
±30
420
14.7
4.5
60
0.38
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
PDF 文件使用 "pdfFactory" 试用版本创建 www.fineprint.cn
Free Datasheet http://www.datasheet-pdf.com/
1 page  
Gate Charge Test Circuit & Waveform
1V2
10V
20F0n
5K0 Ω
30F0n
VSG
Sm Tpa e ye
a DTsU
VSG
1V0
VSD
Qgs
DTU
3Am
Qg
Qgd
Caghr e
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
10%
VGS
t(nd)o
tr
tno
t(f)dfo
tf
tfof
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
BSVSD1
-- I 2 ----------E =-- L S ----------ASA2B S -VVS DDD
ID
RG
VDD
BSVSD
ISA
I(tD)
DUT
VDD
V ()DtS
tp Teim
PDF 文件使用 "pdfFactory" 试用版本创建 www.fineprint.cn
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HF10N60.PDF ] | |
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