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PDF HI-201HS Data sheet ( Hoja de datos )
| Número de pieza | HI-201HS | |
| Descripción | High Speed/ Quad SPST/ CMOS Analog Switch | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HI-201HS
July 1999 File Number 3123.2
High Speed, Quad SPST, CMOS Analog
Switch
The HI-201HS is a monolithic CMOS Analog Switch
featuring very fast switching speeds and low ON resistance.
The integrated circuit consists of four independently
selectable SPST switches and is pin compatible with the
industry standard HI-201 switch.
Fabricated using silicon-gate technology and the Intersil
Dielectric Isolation process, this TTL compatible device offers
improved performance over previously available CMOS analog
switches. Featuring maximum switching times of 50ns, low ON
resistance of 50Ω maximum, and a wide analog signal range, the
HI-201HS is designed for any application where improved
switching performance, particularly switching speed, is required.
(A more detailed discussion on the design and application of the
HI-201HS can be found in Application Note AN543.)
Ordering Information
PART NUMBER
HI1-0201HS-2
HI1-0201HS-4
HI1-0201HS-5
HI3-0201HS-5
HI4P0201HS-5
HI9P0201HS-5
HI9P0201HS-9
TEMP.
RANGE (oC)
PACKAGE
-55 to 125 16 Ld CERDIP
-25 to 85 16 Ld CERDIP
0 to 75 16 Ld CERDIP
0 to 75 16 Ld PDIP
0 to 75 20 Ld PLCC
0 to 75 16 Ld SOIC
-40 to 85 16 Ld SOIC
PKG.
NO.
F16.3
F16.3
F16.3
E16.3
N20.35
M16.3
M16.3
Pinouts (Switches Shown For Logic “1” Input)
HI-201HS (CERDIP, PDIP, SOIC)
TOP VIEW
A1 1
OUT1 2
IN1 3
V- 4
GND 5
IN4 6
OUT4 7
A4 8
16 A2
15 OUT2
14 IN2
13 V+
12 NC
11 IN3
10 OUT3
9 A3
Features
• Fast Switching Times
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30ns
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns
• Low “ON” Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30Ω
• Pin Compatible with Standard HI-201
• Wide Analog Voltage Range (±15V Supplies) . . . . . . . ±15V
• Low Charge Injection (±15V Supplies) . . . . . . . . . . 10pC
• TTL Compatible
• Symmetrical Switching Analog Current Range . . . . . 80mA
Applications
• High Speed Multiplexing
• High Frequency Analog Switching
• Sample and Hold Circuits
• Digital Filters
• Operational Amplifier Gain Switching Networks
• Integrator Reset Circuits
HI201HS (PLCC)
TOP VIEW
3 2 1 20 19
IN 1 4
V- 5
6
GND 7
IN 4 8
18 IN 2
17 V+
16
15
14 IN 3
9 10 11 12 13
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HI-201HS
Electrical Specifications Supplies = +15V, -15V; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = +0.8V, GND = 0V,
Unless Otherwise Specified (Continued)
PARAMETER
TEST
TEMP
CONDITIONS (oC)
MIN
-2
TYP MAX
-4, -5, -9
MIN TYP MAX
rON Match
OFF Input Leakage Current, IS(OFF)
25 - 3 - - 3 -
25 - 0.3 10 - 0.3 10
Full -
- 100 -
- 50
OFF Output Leakage Current, ID(OFF)
25 - 0.3 10 - 0.3 10
Full -
- 100 -
- 50
ON Leakage Current, ID(ON)
25 - 0.1 10 - 0.1 10
Full -
- 100 -
- 50
POWER SUPPLY CHARACTERISTICS (Note 7)
Power Dissipation, PD
25 - 120 -
- 120 -
Full -
- 240 -
- 240
Current, I+ (Pin 13)
25 - 4.5 -
- 4.5 -
Full -
- 10.0 -
- 10.0
Current, I- (Pin 4)
25 - 3.5 -
- 3.5 -
Full - - 6 - - 6
NOTES:
2. VOUT = ±10V, IOUT = 1mA.
3. RL = 1kΩ, CL = 35pF, VIN = +10V, VA = +3V. (See Figure 1).
4. VA = 3V, RL = 1kΩ, CL = 10pF, VIN = 3VRMS, f = 100kHz.
5. VA = 3V, RL = 1kΩ, VIN = 3VRMS, f = 100kHz.
6. CL = 1nF, VIN = 0V, Q = CL x ∆VO.
7. VA = 3V or VA = 0 for all switches.
UNITS
%
nA
nA
nA
nA
nA
nA
mW
mW
mA
mA
mA
mA
Test Circuits and Waveforms
DIGITALVAH = 3.0V
INPUT
50%
VAL = 0V
SWITCH 0V
OUTPUT
tON
90%
50%
tOFF1
90%
tOFF2
10%
FIGURE 1A. MEASUREMENT POINTS
TOP: Logic Input (2V/Div.) BOTTOM: Output (5V/Div.)
HORIZONTAL: 100ns/Div.
FIGURE 1B. WAVEFORMS
5
5 Page 
Die Characteristics
DIE DIMENSIONS:
2440µm x 2860µm x 485µm
METALLIZATION:
Type: CuAl
Thickness: 16kÅ ±2kÅ
Metallization Mask Layout
OUT1
A1
HI-201HS
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5kÅ ±1kÅ
Silox Thickness: 12kÅ ±2kÅ
WORST CASE CURRENT DENSITY:
9.5 x 104 A/cm2
HI-201HS
A2
OUT2
IN1
V-
GND
IN4
IN2
V+
IN3
OUT4
A4
OUT3
A3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
11
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