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PDF HGTP7N60C3D Data sheet ( Hoja de datos )
| Número de pieza | HGTP7N60C3D | |
| Descripción | 14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP7N60C3D, HGT1S7N60C3DS
January 2000 File Number 4150.2
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTP7N60C3D and HGT1S7N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is
developmental type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49121.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60C3D
TO-220AB
G7N60C3D
HGT1S7N60C3DS TO-263AB
G7N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
Symbol
C
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP7N60C3D, HGT1S7N60C3DS
Typical Performance Curves (Continued)
2000 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V
1000
VGE = 10V
500
VGE = 15V
3000
TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V
1000
500
VGE = 10V OR 15V
100
40
2 5 8 11 14 17 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
TJ = 150oC, TC = 75oC
100 RG = 50Ω, L = 1mH
VGE = 10V
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W
1
2 10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
1200
1000
800
CIES
FREQUENCY = 1MHz
600
400
200
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
100
2
5 8 11 14 17
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
50
TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH
40
30
20
10
0
0
100 200
300 400
500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
IG(REF) = 1.044mA, RL = 50Ω, TC = 25oC
600 15
500 12.5
400 VCE = 200V 10
300 VCE = 400V 7.5
VCE = 600V
200 5
100 2.5
00
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTP7N60C3D.PDF ] | |
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