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HGTP7N60C3 の電気的特性と機能

HGTP7N60C3のメーカーはIntersil Corporationです、この部品の機能は「14A/ 600V/ UFS Series N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTP7N60C3
部品説明 14A/ 600V/ UFS Series N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGTP7N60C3 Datasheet, HGTP7N60C3 PDF,ピン配置, 機能
Data Sheet
HGTD7N60C3S, HGTP7N60C3
January 2000 File Number 4141.3
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49115.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60C3S
TO-252AA
G7N60C
HGTP7N60C3
TO-220AB
G7N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.
Symbol
C
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGTP7N60C3 pdf, ピン配列
HGTD7N60C3S, HGTP7N60C3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
td(ON)I
trI
td(OFF)I
tfI
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG= 50
L = 1.0mH
- 8.5 - ns
- 11.5 -
ns
-
350 400
ns
-
140 275
ns
Turn-On Energy
EON
- 165 -
µJ
Turn-Off Energy (Note 3)
Thermal Resistance
EOFF
RθJC
- 600 -
µJ
- - 2.1 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
Typical Performance Curves
40
DUTY CYCLE <0.5%, VCE = 10V
35 PULSE DURATION = 250µs
30
25
TC = 150oC
20
TC = 25oC
15
TC = -40oC
10
5
0
4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
40
PULSE DURATION = 250µs,
35 DUTY CYCLE <0.5%,
TC = 25oC
30
25 VGE = 15.0V
12.0V
10.0V
20
9.0V
15
8.5V
10
8.0V
5 7.5V
0 7.0V
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
40
PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 10V
30
25
TC = -40oC
20
15
10
5
0
0
TC = 150oC
TC = 25oC
1234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
30
TC = 25oC
25
20
TC = 150oC
15
10
5
0
01 2 34
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE


3Pages


HGTP7N60C3 電子部品, 半導体
HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves (Continued)
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
t1
t2
101
Test Circuit and Waveform
RG = 50
L = 1mH
RHRD660
+
VDD = 480V
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
10%
EOFF EON
90%
ICE 10%
td(OFF) I
tfI
trI
td(ON) I
FIGURE 19. SWITCHING TEST WAVEFORMS
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HGTP7N60C3

14A/ 600V/ UFS Series N-Channel IGBTs

Fairchild Semiconductor
Fairchild Semiconductor
HGTP7N60C3

14A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTP7N60C3D

14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor
HGTP7N60C3D

14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Intersil Corporation
Intersil Corporation


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