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PDF HGTP7N60B3 Data sheet ( Hoja de datos )
| Número de pieza | HGTP7N60B3 | |
| Descripción | 14A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet
January 2000 File Number 4412.2
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49190.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60B3S
TO-252AA
G7N60B
HGT1S7N60B3S
TO-263AB
G7N60B3
HGTP7N60B3
TO-220AB
G7N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,
HGTD7N60B3S9A.
Symbol
C
G
E
Features
• 14A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
60
RG = 50Ω, L = 2mH, VCE = 480V
50
TJ = 150oC, VGE = 10V
40
TJ = 25oC, VGE = 10V
30 TJ = 25oC, VGE = 15V
20
TJ = 150oC, VGE = 15V
10
1
3 5 7 9 11 13
ICE, COLLECTOR TO EMITTER CURRENT (A)
15
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 50Ω, L = 2mH, VCE = 480V
120
100
80 TJ = 150oC, VGE = 10V
60 TJ = 25oC, VGE = 10V
40
20 TJ = 25oC and 150oC, VGE = 15V
0
1 3 5 7 9 11 13 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 50Ω, L = 2mH, VCE = 480V
200
TJ = 150oC, VGE = 15V
150
TJ = 150oC, VGE = 10V
TJ = 25oC, VGE = 15V
100
TJ = 25oC, VGE = 10V
50
1 3 5 7 9 11 13 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 50Ω, L = 2mH, VCE = 480V
100
TJ = 150oC, VGE = 10V and 15V
80
60
40
1
TJ = 25oC, VGE = 10V and 15V
3 5 7 9 11 13
ICE, COLLECTOR TO EMITTER CURRENT (A)
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs
32 VCE = 10V
24
TC = 25oC
16
TC = 150oC
8
TC = -55oC
0
6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
14
5
15 Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC
12
9
VCE = 200V
VCE = 600V
6 VCE = 400V
3
0
0 4 8 12 16 20 24
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
28
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTP7N60B3.PDF ] | |
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