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PDF HGTP3N60C3D Data sheet ( Hoja de datos )
| Número de pieza | HGTP3N60C3D | |
| Descripción | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP3N60C3D, HGT1S3N60C3DS
January 2000 File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
Formerly Developmental Type TA49119.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60C3D
TO-220AB
G3N60C3D
HGT1S3N60C3DS TO-263AB
G3N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60C3DS9A.
Symbol
C
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
200
TJ = 150oC, TC = 75oC
RG = 82Ω, L = 1mH
100
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 3.75oC/W
10
1 23
VGE = 15V
VGE = 10V
4 56
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
500
FREQUENCY = 1MHz
400 CIES
20 TJ = 150oC, VGE = 15V, RG = 82Ω, L = 1mH
18
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
600 15
480 12
300
200
100 COES
CRES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
360 9
VCE = 600V
VCE = 400V
240
VCE = 200V
6
120 IG(REF) = 1.060mA 3
RL = 200Ω
TC = 25oC
00
0 2 4 6 8 10 12 14
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTP3N60C3D.PDF ] | |
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