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HGTP3N60B3 の電気的特性と機能

HGTP3N60B3のメーカーはIntersil Corporationです、この部品の機能は「7A/ 600V/ UFS Series N-Channel IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HGTP3N60B3
部品説明 7A/ 600V/ UFS Series N-Channel IGBTs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HGTP3N60B3 Datasheet, HGTP3N60B3 PDF,ピン配置, 機能
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet
January 2000 File Number 4368.1
7A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET
and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49192.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60B3S
TO-252AA
G3N60B
HGT1S3N60B3S
TO-263AB
G3N60B3
HGTP3N60B3
TO-220AB
G3N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.
Symbol
C
G
E
Features
• 7A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





HGTP3N60B3 pdf, ピン配列
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
td(ON)I
trI
td(OFF)I
tfI
EON
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 82
L = 1mH
Test Circuit (Figure 17)
- 16
-
ns
- 18
-
ns
- 220 295 ns
- 115 175 ns
- 130 140 µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
- 210 325 µJ
-
-
3.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
7
VGE = 15V
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
20 TJ = 150oC, RG = 82, VGE = 15V, L = 500µH
18
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
200
TJ = 150oC, RG = 82, L = 1mH, VCE = 480V
100 TC VGE
7755ooCC
110oC
110oC
15V
10V
15V
10V
10
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 3.75oC/W, SEE NOTES
1
1234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16 45
VCE = 360V, RG = 82, TJ = 125oC
14 40
ISC
12 35
10 30
8 25
tSC
6 20
4 15
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3


3Pages


HGTP3N60B3 電子部品, 半導体
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
PD
100
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
t1
t2
Test Circuit and Waveform
101
RG = 82
L = 1mH
RHRD460
+
- VDD = 480V
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON
90%
10%
td(OFF)I tfI
tfI
td(ON)I
FIGURE 18. SWITCHING TEST WAVEFORMS
6

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共有リンク

Link :


部品番号部品説明メーカ
HGTP3N60B3

7A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTP3N60B3D

7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Intersil Corporation
Intersil Corporation


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